Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Semiconductor grown tantalum carbide coated graphite component and method of making same
The invention relates to a semiconductor grown tantalum carbide coated graphite component and a preparation method thereof. The preparation method comprises the following steps: putting a graphite disc substrate into a reaction chamber in a hydrogen atmosphere, vacuumizing the reaction chamber, heating to 1000-1500 DEG C, keeping the temperature for 1-3 hours, and cooling; s2, preparing mixed powder of mixed salt, a Ta source and Ta fluoride, placing the graphite disc provided in the S1 on the powder, sintering, and keeping the temperature of 900-1500 DEG C in an argon atmosphere for 2-12 hours to obtain a TaC pre-coating layer; and the formed TaC precoating is transferred to a high-temperature sintering furnace, sintering is conducted at the temperature of 1800-2400 DEG C in the argon atmosphere, sintering lasts for 0.5-6 h, and the TaC coating is obtained. According to the preparation method provided by the invention, the service life of the tantalum carbide coating graphite part for semiconductor growth can be prolonged, and the compact TaC coating graphite disc which is simple in preparation process and strong in coating and matrix combination is obtained.
本发明涉及一种半导体生长的碳化钽涂层石墨部件及其制备方法。制备方法包括以下步骤：将石墨圆盘基底放置进氢气氛围的反应室，将反应室抽至真空，升温至1000‑1500℃，保温1‑3h后冷却；制备混合盐、Ta源和Ta的氟化物的混合粉体，将S1提供的石墨圆盘放置在所述粉体上，进行烧结，在氩气的氛围中保持900‑1500℃，持续2‑12h，得到TaC预涂层；将形成的TaC预涂层转至高温烧结炉，在氩气的氛围中保持1800‑2400℃进行烧结，持续0.5‑6h，得到TaC涂层。本发明提供的制备方法能够提高半导体生长的碳化钽涂层石墨部件的使用寿命，得到制备工艺简单、涂层和基体结合强的致密TaC涂层石墨圆盘。
Semiconductor grown tantalum carbide coated graphite component and method of making same
The invention relates to a semiconductor grown tantalum carbide coated graphite component and a preparation method thereof. The preparation method comprises the following steps: putting a graphite disc substrate into a reaction chamber in a hydrogen atmosphere, vacuumizing the reaction chamber, heating to 1000-1500 DEG C, keeping the temperature for 1-3 hours, and cooling; s2, preparing mixed powder of mixed salt, a Ta source and Ta fluoride, placing the graphite disc provided in the S1 on the powder, sintering, and keeping the temperature of 900-1500 DEG C in an argon atmosphere for 2-12 hours to obtain a TaC pre-coating layer; and the formed TaC precoating is transferred to a high-temperature sintering furnace, sintering is conducted at the temperature of 1800-2400 DEG C in the argon atmosphere, sintering lasts for 0.5-6 h, and the TaC coating is obtained. According to the preparation method provided by the invention, the service life of the tantalum carbide coating graphite part for semiconductor growth can be prolonged, and the compact TaC coating graphite disc which is simple in preparation process and strong in coating and matrix combination is obtained.
本发明涉及一种半导体生长的碳化钽涂层石墨部件及其制备方法。制备方法包括以下步骤：将石墨圆盘基底放置进氢气氛围的反应室，将反应室抽至真空，升温至1000‑1500℃，保温1‑3h后冷却；制备混合盐、Ta源和Ta的氟化物的混合粉体，将S1提供的石墨圆盘放置在所述粉体上，进行烧结，在氩气的氛围中保持900‑1500℃，持续2‑12h，得到TaC预涂层；将形成的TaC预涂层转至高温烧结炉，在氩气的氛围中保持1800‑2400℃进行烧结，持续0.5‑6h，得到TaC涂层。本发明提供的制备方法能够提高半导体生长的碳化钽涂层石墨部件的使用寿命，得到制备工艺简单、涂层和基体结合强的致密TaC涂层石墨圆盘。
Semiconductor grown tantalum carbide coated graphite component and method of making same
半导体生长的碳化钽涂层石墨部件及其制备方法
YANG WEIFENG (Autor:in) / JIN CAIXIA (Autor:in) / ZHU BAIXI (Autor:in) / HUANG YUPENG (Autor:in) / QIN ZHIBO (Autor:in)
08.12.2023
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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