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Ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant and preparation method thereof
The invention belongs to the field of electronic materials, and provides a ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant and a preparation method thereof. Firstly, based on a Bi-Ca-Sn-Zr ion substituted YIG ferrite material, a Y < 2.0-x > Bi < 1.0 > Ca < x > Fe < 5-2x > Sn < x > Zr < x > O < 12 > ferrite material is prepared by utilizing a traditional solid-phase sintering method, and Bi-Ca ion substitution in the components can improve the dielectric constant of the material, so that the material has the characteristic of high dielectric constant (the dielectric constant epsilon 'is greater than or equal to 20) within the frequency band of 1-500 MHz; sn-Zr ion substitution in the components promotes the reduction of magnetocrystalline anisotropy and loss of the material, improves the influence of internal stress and pores of the material on ferromagnetic resonance line width, and reduces the magnetic loss of ferrite in a high frequency band, so that the material has relatively low ferromagnetic resonance line width (delta H is less than or equal to 100Oe); however, the ferrite thick film material is prepared by adopting a spinning process, and the ferrite thick film material with low ferromagnetic resonance line width and high dielectric constant is obtained by annealing and forming under magnetic field orientation, so that the requirements of microwave devices are met.
本发明属于电子材料领域，提供一种低铁磁共振线宽高介电常数铁氧体厚膜材料及其制备方法；首先，采用Bi‑Ca‑Sn‑Zr离子取代的YIG铁氧体材料作为基础，利用传统的固相烧结法制备Y2.0‑xBi1.0CaxFe5‑2xSnxZrxO12铁氧体材料，成分中的Bi‑Ca离子取代可以提升材料的介电常数，使材料在1MHz～500MHz频段内具高介电常数特性(介电常数ε'≥20)，成分中的Sn‑Zr离子取代促进材料降低磁晶各向异性和损耗，并改善材料的内应力和气孔对铁磁共振线宽的影响，降低铁氧体在高频段的磁损耗，使材料具有较低的铁磁共振线宽(ΔH≤100Oe)；然而，采用甩胶工艺制备铁氧体厚膜材料，并通过在磁场取向下退火成型得到具有低铁磁共振线宽、高介电常数的铁氧体厚膜材料，满足微波器件的需求。
Ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant and preparation method thereof
The invention belongs to the field of electronic materials, and provides a ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant and a preparation method thereof. Firstly, based on a Bi-Ca-Sn-Zr ion substituted YIG ferrite material, a Y < 2.0-x > Bi < 1.0 > Ca < x > Fe < 5-2x > Sn < x > Zr < x > O < 12 > ferrite material is prepared by utilizing a traditional solid-phase sintering method, and Bi-Ca ion substitution in the components can improve the dielectric constant of the material, so that the material has the characteristic of high dielectric constant (the dielectric constant epsilon 'is greater than or equal to 20) within the frequency band of 1-500 MHz; sn-Zr ion substitution in the components promotes the reduction of magnetocrystalline anisotropy and loss of the material, improves the influence of internal stress and pores of the material on ferromagnetic resonance line width, and reduces the magnetic loss of ferrite in a high frequency band, so that the material has relatively low ferromagnetic resonance line width (delta H is less than or equal to 100Oe); however, the ferrite thick film material is prepared by adopting a spinning process, and the ferrite thick film material with low ferromagnetic resonance line width and high dielectric constant is obtained by annealing and forming under magnetic field orientation, so that the requirements of microwave devices are met.
本发明属于电子材料领域，提供一种低铁磁共振线宽高介电常数铁氧体厚膜材料及其制备方法；首先，采用Bi‑Ca‑Sn‑Zr离子取代的YIG铁氧体材料作为基础，利用传统的固相烧结法制备Y2.0‑xBi1.0CaxFe5‑2xSnxZrxO12铁氧体材料，成分中的Bi‑Ca离子取代可以提升材料的介电常数，使材料在1MHz～500MHz频段内具高介电常数特性(介电常数ε'≥20)，成分中的Sn‑Zr离子取代促进材料降低磁晶各向异性和损耗，并改善材料的内应力和气孔对铁磁共振线宽的影响，降低铁氧体在高频段的磁损耗，使材料具有较低的铁磁共振线宽(ΔH≤100Oe)；然而，采用甩胶工艺制备铁氧体厚膜材料，并通过在磁场取向下退火成型得到具有低铁磁共振线宽、高介电常数的铁氧体厚膜材料，满足微波器件的需求。
Ferrite thick film material with low ferromagnetic resonance linewidth and high dielectric constant and preparation method thereof
低铁磁共振线宽高介电常数铁氧体厚膜材料及其制备方法
LU BING (Autor:in) / WANG SHUAI (Autor:in) / LI JIE (Autor:in) / SUN KAI (Autor:in) / CHEN YIXIN (Autor:in) / LIU YINGLI (Autor:in)
26.12.2023
Patent
Elektronische Ressource
Chinesisch
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