Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Silicon nitride ceramic formula capable of being used for 3D printing process and silicon nitride ceramic preparation method
The invention relates to a silicon nitride ceramic formula for a 3D printing process and a silicon nitride ceramic preparation method. The ceramic formula comprises 75-85% of silicon nitride powder, 3-6% of boron oxide powder or 3-6% of boric acid, 3-5% of silicon oxide powder, 3-6% of alumina powder, 3-6% of yttrium oxide powder and 3-5% of boron nitride powder. A preparation method adopted in the preparation method comprises the following steps: weighing and mixing powder, carrying out liquid-phase ball milling, drying and crushing according to a water-to-material ratio of (1-2): 1, and sieving with a 100-mesh sieve; the preparation method comprises the following steps: preparing a silicon nitride green body through photosensitive curing molding or fused deposition molding, sintering the green body, with the heating rate of 400-800 DEG C being 0.5-2 DEG C/min, the heating rate of 800-1300 DEG C being 3-6 DEG C/min, the heating rate of 1300-1750 DEG C being 5-10 DEG C/min, the final sintering temperature being 1700-1800 DEG C, and the heat preservation time being 1-2 h. According to the silicon nitride ceramic formula and the preparation method, the density of the prepared silicon nitride ceramic can reach 70-94%, the bending strength reaches 200-300 MPa, and the product can be used in the field of aerospace.
本发明涉及一种可用于3D打印工艺的氮化硅陶瓷配方及氮化硅陶瓷制备方法。陶瓷配方为：氮化硅粉75‑85％、氧化硼粉3‑6％或硼酸3‑6％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％。制备方法中采用的配制方法为：粉体称重混合、水料比(1‑2)：1液相球磨、干燥、粉碎、100目过筛；制备过程包括：光敏固化成型或熔融沉积成型制备氮化硅坯体后，胚体进行烧结，其中400‑800℃升温速率为0.5‑2℃/min，800‑1300℃升温速率为3‑6℃/min，1300‑1750℃升温速率为5‑10℃/min，最终的烧结温度为1700‑1800℃，保温时间为1‑2h。上述氮化硅陶瓷配方及制备方法，制备出的氮化硅陶瓷致密度可达到70‑94％，弯曲强度达到200‑300MPa，产品可用于航空航天领域。
Silicon nitride ceramic formula capable of being used for 3D printing process and silicon nitride ceramic preparation method
The invention relates to a silicon nitride ceramic formula for a 3D printing process and a silicon nitride ceramic preparation method. The ceramic formula comprises 75-85% of silicon nitride powder, 3-6% of boron oxide powder or 3-6% of boric acid, 3-5% of silicon oxide powder, 3-6% of alumina powder, 3-6% of yttrium oxide powder and 3-5% of boron nitride powder. A preparation method adopted in the preparation method comprises the following steps: weighing and mixing powder, carrying out liquid-phase ball milling, drying and crushing according to a water-to-material ratio of (1-2): 1, and sieving with a 100-mesh sieve; the preparation method comprises the following steps: preparing a silicon nitride green body through photosensitive curing molding or fused deposition molding, sintering the green body, with the heating rate of 400-800 DEG C being 0.5-2 DEG C/min, the heating rate of 800-1300 DEG C being 3-6 DEG C/min, the heating rate of 1300-1750 DEG C being 5-10 DEG C/min, the final sintering temperature being 1700-1800 DEG C, and the heat preservation time being 1-2 h. According to the silicon nitride ceramic formula and the preparation method, the density of the prepared silicon nitride ceramic can reach 70-94%, the bending strength reaches 200-300 MPa, and the product can be used in the field of aerospace.
本发明涉及一种可用于3D打印工艺的氮化硅陶瓷配方及氮化硅陶瓷制备方法。陶瓷配方为：氮化硅粉75‑85％、氧化硼粉3‑6％或硼酸3‑6％、氧化硅粉3‑5％，氧化铝粉3‑6％、氧化钇粉3‑6％、氮化硼粉3‑5％。制备方法中采用的配制方法为：粉体称重混合、水料比(1‑2)：1液相球磨、干燥、粉碎、100目过筛；制备过程包括：光敏固化成型或熔融沉积成型制备氮化硅坯体后，胚体进行烧结，其中400‑800℃升温速率为0.5‑2℃/min，800‑1300℃升温速率为3‑6℃/min，1300‑1750℃升温速率为5‑10℃/min，最终的烧结温度为1700‑1800℃，保温时间为1‑2h。上述氮化硅陶瓷配方及制备方法，制备出的氮化硅陶瓷致密度可达到70‑94％，弯曲强度达到200‑300MPa，产品可用于航空航天领域。
Silicon nitride ceramic formula capable of being used for 3D printing process and silicon nitride ceramic preparation method
一种可用于3D打印工艺的氮化硅陶瓷配方及氮化硅陶瓷制备方法
SUN ZHIQIANG (Autor:in) / ZHANG LU (Autor:in) / HAN YAO (Autor:in) / DONG HENG (Autor:in) / ZHANG JIAN (Autor:in) / LI SHUQIN (Autor:in) / YU CHANGQING (Autor:in)
09.01.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
/
B33Y
ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
,
Additive (generative) Fertigung, d. h. die Herstellung von dreidimensionalen [3D] Bauteilen durch additive Abscheidung, additive Agglomeration oder additive Schichtung, z. B. durch 3D- Drucken, Stereolithografie oder selektives Lasersintern
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