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Microwave dielectric ceramic material as well as preparation method and application thereof
The invention belongs to the technical field of capacitors, and particularly relates to a microwave dielectric ceramic material and a preparation method and application thereof. The microwave dielectric ceramic material provided by the invention is prepared from the following raw materials in percentage by mass: 46.99 to 91.98 weight percent of Mg2 (Si < 0.08 > Ti < 0.92 >) O4, 0.39 to 38.45 weight percent of Ba < 6-3x > Sm < 8 + 2x > Ti < 17.95 > Zr < 0.05 > O54, 0.86 to 1.96 weight percent of sintering aid and 0.08 to 19.77 weight percent of modified additive, and x is more than or equal to 0.5 and less than or equal to 0.7. The microwave dielectric ceramic material provided by the invention has relatively high insulation resistivity, meets the requirement of an AG temperature coefficient in GB 5596 in a temperature range of-55 DEG C to 125 DEG C, and can be used for preparing a single-layer chip ceramic dielectric capacitor with a relatively wide capacitance range and an AG characteristic.
本发明属于电容器件技术领域，具体涉及一种微波介质陶瓷材料及其制备方法和应用。本发明提供的微波介质陶瓷材料包括以下质量百分含量的原料：46.99～91.98wt％Mg2(Si0.08Ti0.92)O4，0.39～38.45wt％Ba6‑3xSm8+2xTi17.95Zr0.05O54，0.86～1.96wt％烧结助剂和0.08～19.77wt％改性添加剂，其中，0.5≤x≤0.7。本发明提供的微波介质陶瓷材料具有较高的绝缘电阻率，在‑55～125℃温度范围内符合GB 5596中AG温度系数的要求，能够用于制备具有较宽电容范围且具有AG特性的单层片式瓷介电容器。
Microwave dielectric ceramic material as well as preparation method and application thereof
The invention belongs to the technical field of capacitors, and particularly relates to a microwave dielectric ceramic material and a preparation method and application thereof. The microwave dielectric ceramic material provided by the invention is prepared from the following raw materials in percentage by mass: 46.99 to 91.98 weight percent of Mg2 (Si < 0.08 > Ti < 0.92 >) O4, 0.39 to 38.45 weight percent of Ba < 6-3x > Sm < 8 + 2x > Ti < 17.95 > Zr < 0.05 > O54, 0.86 to 1.96 weight percent of sintering aid and 0.08 to 19.77 weight percent of modified additive, and x is more than or equal to 0.5 and less than or equal to 0.7. The microwave dielectric ceramic material provided by the invention has relatively high insulation resistivity, meets the requirement of an AG temperature coefficient in GB 5596 in a temperature range of-55 DEG C to 125 DEG C, and can be used for preparing a single-layer chip ceramic dielectric capacitor with a relatively wide capacitance range and an AG characteristic.
本发明属于电容器件技术领域，具体涉及一种微波介质陶瓷材料及其制备方法和应用。本发明提供的微波介质陶瓷材料包括以下质量百分含量的原料：46.99～91.98wt％Mg2(Si0.08Ti0.92)O4，0.39～38.45wt％Ba6‑3xSm8+2xTi17.95Zr0.05O54，0.86～1.96wt％烧结助剂和0.08～19.77wt％改性添加剂，其中，0.5≤x≤0.7。本发明提供的微波介质陶瓷材料具有较高的绝缘电阻率，在‑55～125℃温度范围内符合GB 5596中AG温度系数的要求，能够用于制备具有较宽电容范围且具有AG特性的单层片式瓷介电容器。
Microwave dielectric ceramic material as well as preparation method and application thereof
一种微波介质陶瓷材料及其制备方法和应用
SONG BEIBEI (Autor:in) / CHENG HUARONG (Autor:in) / DUAN CHENGHUI (Autor:in) / SHENG PENG (Autor:in) / ZHANG WEIPENG (Autor:in)
19.01.2024
Patent
Elektronische Ressource
Chinesisch
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