Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
B4C-TiB2-SiC conductive composite ceramic and preparation method thereof
The invention discloses B4C-TiB2-SiC conductive composite ceramic and a preparation method thereof, and belongs to the field of ceramic materials. The conductive composite ceramic has a microstructure that TiB2-SiC composite small grains coat B4C large grains, the volume content of TiB2 is 5-20%, and the molar ratio of TiB2 to SiC is 2: 3. The conductive composite ceramic is prepared from the following raw materials: B4C, TiC and elemental Si powder. The preparation method comprises the following steps: respectively weighing the raw material powder according to a component design ratio; uniformly mixing and fully drying; and sintering in a vacuum atmosphere by using a discharge plasma sintering furnace to prepare the composite ceramic. According to the invention, a coating type microstructure in which the TiB2-SiC composite small crystal grains coat the B4C large crystal grains is constructed, the introduction of SiC effectively inhibits the growth of TiB2 conductive phase crystal grains, and promotes the formation and improvement of a conductive network. Compared with the method without introduction of SiC, the composite ceramic prepared by the method has higher conductivity under the same or lower TiB2 content. The preparation process is simple, and no other special complex method is needed.
本发明公开了一种B4C–TiB2–SiC导电复相陶瓷及其制备方法，属于陶瓷材料领域。该导电复相陶瓷具有TiB2–SiC复合小晶粒包覆B4C大晶粒的显微结构，其中：TiB2的体积含量为5–20％，TiB2与SiC的摩尔比为2:3。该导电复相陶瓷制备原料为：B4C、TiC和单质Si粉体，其制备步骤是：按照成分设计配比分别称取原料粉体；混合均匀后充分干燥；使用放电等离子烧结炉在真空气氛中烧结制备复相陶瓷。本发明构筑了TiB2–SiC复合小晶粒包覆B4C大晶粒的包覆型显微结构，SiC的引入有效地抑制了TiB2导电相晶粒的长大，促进了导电网络的形成和完善。与没有引入SiC相比，本发明制备的复相陶瓷在相同或更低TiB2含量下具有更高的电导率。本发明制备过程简单，无需任何其它特殊复杂方法。
B4C-TiB2-SiC conductive composite ceramic and preparation method thereof
The invention discloses B4C-TiB2-SiC conductive composite ceramic and a preparation method thereof, and belongs to the field of ceramic materials. The conductive composite ceramic has a microstructure that TiB2-SiC composite small grains coat B4C large grains, the volume content of TiB2 is 5-20%, and the molar ratio of TiB2 to SiC is 2: 3. The conductive composite ceramic is prepared from the following raw materials: B4C, TiC and elemental Si powder. The preparation method comprises the following steps: respectively weighing the raw material powder according to a component design ratio; uniformly mixing and fully drying; and sintering in a vacuum atmosphere by using a discharge plasma sintering furnace to prepare the composite ceramic. According to the invention, a coating type microstructure in which the TiB2-SiC composite small crystal grains coat the B4C large crystal grains is constructed, the introduction of SiC effectively inhibits the growth of TiB2 conductive phase crystal grains, and promotes the formation and improvement of a conductive network. Compared with the method without introduction of SiC, the composite ceramic prepared by the method has higher conductivity under the same or lower TiB2 content. The preparation process is simple, and no other special complex method is needed.
本发明公开了一种B4C–TiB2–SiC导电复相陶瓷及其制备方法，属于陶瓷材料领域。该导电复相陶瓷具有TiB2–SiC复合小晶粒包覆B4C大晶粒的显微结构，其中：TiB2的体积含量为5–20％，TiB2与SiC的摩尔比为2:3。该导电复相陶瓷制备原料为：B4C、TiC和单质Si粉体，其制备步骤是：按照成分设计配比分别称取原料粉体；混合均匀后充分干燥；使用放电等离子烧结炉在真空气氛中烧结制备复相陶瓷。本发明构筑了TiB2–SiC复合小晶粒包覆B4C大晶粒的包覆型显微结构，SiC的引入有效地抑制了TiB2导电相晶粒的长大，促进了导电网络的形成和完善。与没有引入SiC相比，本发明制备的复相陶瓷在相同或更低TiB2含量下具有更高的电导率。本发明制备过程简单，无需任何其它特殊复杂方法。
B4C-TiB2-SiC conductive composite ceramic and preparation method thereof
一种B4C–TiB2–SiC导电复相陶瓷及其制备方法
RAN SONGLIN (Autor:in) / ZHAO JUN (Autor:in) / LIU LIANGLIANG (Autor:in) / WANG DONG (Autor:in) / JIN XING (Autor:in) / DING XIANG (Autor:in)
23.02.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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