Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-purity silicon carbide composite film material, preparation method thereof and method for forming impurity-free silicon carbide film on substrate
The invention relates to the field of infrared coating materials, in particular to a high-purity silicon carbide composite film material, a preparation method of the high-purity silicon carbide composite film material and a method for forming an impurity-free silicon carbide film on a substrate. The preparation method provided by the invention comprises the following steps: performing pressure sintering on graphite and silicon powder to obtain a silicon carbide composite film material; the pressure sintering temperature ranges from 1800 DEG C to 2200 DEG C; the pressure sintering time is 30 to 60 minutes; the pressure in the pressure sintering process is increased from 0.1 MPa to more than 10 MPa. According to the preparation method provided by the invention, the high-purity impurity-free silicon carbide film material can be obtained, the processing of the high-purity impurity-free silicon carbide film can be realized by utilizing an evaporation coating method, and the problem of impurities generated by the conventional evaporation coating silicon carbide film is solved. Experiments show that the ten zinc selenide lenses prepared by the method have no impurity points on the surfaces, and the film material is proved to have few impurities and high purity.
本发明涉及红外镀膜材料领域，具体是一种高纯碳化硅复合膜料及其制备方法和在基体上形成无杂质碳化硅膜的方法。本发明提供的制备方法，包括以下步骤：将石墨和硅粉进行加压烧结，得到碳化硅复合膜料；所述加压烧结的温度为1800～2200℃；所述加压烧结的时间为30～60min；所述加压烧结的过程中压力从0.1MPa增加至10MPa以上。本发明提供的制备方法能够得到高纯无杂质的碳化硅膜料，将其利用蒸发镀膜的方法就能实现高纯度无杂质碳化硅薄膜的加工，改变了常规适用蒸发镀膜碳化硅薄膜产生的杂质问题。实验表明，通过本发明的方法制备的10片硒化锌镜片表面无任何杂质点，证明膜料内杂质较少纯度较高。
High-purity silicon carbide composite film material, preparation method thereof and method for forming impurity-free silicon carbide film on substrate
The invention relates to the field of infrared coating materials, in particular to a high-purity silicon carbide composite film material, a preparation method of the high-purity silicon carbide composite film material and a method for forming an impurity-free silicon carbide film on a substrate. The preparation method provided by the invention comprises the following steps: performing pressure sintering on graphite and silicon powder to obtain a silicon carbide composite film material; the pressure sintering temperature ranges from 1800 DEG C to 2200 DEG C; the pressure sintering time is 30 to 60 minutes; the pressure in the pressure sintering process is increased from 0.1 MPa to more than 10 MPa. According to the preparation method provided by the invention, the high-purity impurity-free silicon carbide film material can be obtained, the processing of the high-purity impurity-free silicon carbide film can be realized by utilizing an evaporation coating method, and the problem of impurities generated by the conventional evaporation coating silicon carbide film is solved. Experiments show that the ten zinc selenide lenses prepared by the method have no impurity points on the surfaces, and the film material is proved to have few impurities and high purity.
本发明涉及红外镀膜材料领域，具体是一种高纯碳化硅复合膜料及其制备方法和在基体上形成无杂质碳化硅膜的方法。本发明提供的制备方法，包括以下步骤：将石墨和硅粉进行加压烧结，得到碳化硅复合膜料；所述加压烧结的温度为1800～2200℃；所述加压烧结的时间为30～60min；所述加压烧结的过程中压力从0.1MPa增加至10MPa以上。本发明提供的制备方法能够得到高纯无杂质的碳化硅膜料，将其利用蒸发镀膜的方法就能实现高纯度无杂质碳化硅薄膜的加工，改变了常规适用蒸发镀膜碳化硅薄膜产生的杂质问题。实验表明，通过本发明的方法制备的10片硒化锌镜片表面无任何杂质点，证明膜料内杂质较少纯度较高。
High-purity silicon carbide composite film material, preparation method thereof and method for forming impurity-free silicon carbide film on substrate
一种高纯碳化硅复合膜料及其制备方法和在基体上形成无杂质碳化硅膜的方法
DAI HUI (Autor:in) / WANG KUI (Autor:in) / WANG XINGXING (Autor:in) / YIN SHIPING (Autor:in)
23.02.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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