Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-purity silicon carbide product and preparation method thereof
The invention provides a high-purity silicon carbide product and a preparation method thereof.The preparation method comprises the following steps that S1, raw materials are prepared, specifically, silicon powder with the purity larger than or equal to 9.99995%, a carbon source with the impurity content smaller than 5 ppm and an additive with the impurity content smaller than 10 ppm are mixed, and the needed raw materials are prepared; s2, biscuit forming: forming the raw materials obtained in the step S1 by adopting a forming process to obtain a biscuit with a designed shape; s3, sintering: putting the biscuit obtained in the step S2 into a graphite crucible, putting the graphite crucible into a high-temperature sintering furnace for vacuum sintering, and cooling to obtain a high-purity silicon carbide product. According to the preparation method, the high-purity silicon powder and the high-purity carbon source which are easy to obtain are directly used as main raw materials, the biscuit with the designed shape is prepared through a forming process, then Si and C in the biscuit are subjected to in-situ reaction through high-temperature sintering to generate SiC, and due to the fact that the raw materials are high in purity and metal impurities are not introduced in the preparation process, the high-purity silicon carbide product can be prepared.
本发明提供一种高纯碳化硅制品及其制备方法，制备方法包括以下步骤：S1、原料准备：将纯度大于等于9.99995％的硅粉、杂质含量小于5ppm的碳源、杂质含量小于10ppm的添加剂混合，制备出所需原料；S2、素坯成型：将步骤S1获得的原料采用成型工艺进行成型，获得设计形状的素坯；S3、烧结：将步骤S2获得的素坯放置于石墨坩埚中，将所述石墨坩埚放置于高温烧结炉中进行真空烧结，冷却后得到高纯碳化硅制品。本发明直接利用易于获得的高纯硅粉和高纯碳源为主要原料，通过成型工艺制备出设计形状的素坯，然后经过高温烧结使得坯体中的Si和C原位反应生成SiC，由于原料纯度高，制备过程不会引入金属杂质，因此可以制备出高纯度的碳化硅制品。
High-purity silicon carbide product and preparation method thereof
The invention provides a high-purity silicon carbide product and a preparation method thereof.The preparation method comprises the following steps that S1, raw materials are prepared, specifically, silicon powder with the purity larger than or equal to 9.99995%, a carbon source with the impurity content smaller than 5 ppm and an additive with the impurity content smaller than 10 ppm are mixed, and the needed raw materials are prepared; s2, biscuit forming: forming the raw materials obtained in the step S1 by adopting a forming process to obtain a biscuit with a designed shape; s3, sintering: putting the biscuit obtained in the step S2 into a graphite crucible, putting the graphite crucible into a high-temperature sintering furnace for vacuum sintering, and cooling to obtain a high-purity silicon carbide product. According to the preparation method, the high-purity silicon powder and the high-purity carbon source which are easy to obtain are directly used as main raw materials, the biscuit with the designed shape is prepared through a forming process, then Si and C in the biscuit are subjected to in-situ reaction through high-temperature sintering to generate SiC, and due to the fact that the raw materials are high in purity and metal impurities are not introduced in the preparation process, the high-purity silicon carbide product can be prepared.
本发明提供一种高纯碳化硅制品及其制备方法，制备方法包括以下步骤：S1、原料准备：将纯度大于等于9.99995％的硅粉、杂质含量小于5ppm的碳源、杂质含量小于10ppm的添加剂混合，制备出所需原料；S2、素坯成型：将步骤S1获得的原料采用成型工艺进行成型，获得设计形状的素坯；S3、烧结：将步骤S2获得的素坯放置于石墨坩埚中，将所述石墨坩埚放置于高温烧结炉中进行真空烧结，冷却后得到高纯碳化硅制品。本发明直接利用易于获得的高纯硅粉和高纯碳源为主要原料，通过成型工艺制备出设计形状的素坯，然后经过高温烧结使得坯体中的Si和C原位反应生成SiC，由于原料纯度高，制备过程不会引入金属杂质，因此可以制备出高纯度的碳化硅制品。
High-purity silicon carbide product and preparation method thereof
一种高纯碳化硅制品及其制备方法
XIONG LIJUN (Autor:in) / WU YANJIAO (Autor:in) / SHEN YUN (Autor:in) / XU BIN (Autor:in) / ZHANG BIYING (Autor:in) / WU GUOPING (Autor:in) / XIE FANGMIN (Autor:in) / YU MINGLIANG (Autor:in) / HONG YUZHE (Autor:in) / CHENG XIANGQIAN (Autor:in)
12.03.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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