Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Method for producing high purity dense sintered SIC material
The invention relates to a polycrystalline silicon carbide sintered material consisting of silicon carbide grains having a median equivalent diameter of 1 to 10 microns, said material having a total porosity of less than 2% of the material volume and a silicon carbide mass content other than free carbon of at least 99%, the mass ratio of the content of SiC having a beta-form crystal form to the content of SiC having an alpha-form crystal form is less than 2. Methods of producing such materials are also disclosed.
本发明涉及由中值当量直径为1至10微米的碳化硅晶粒组成的多晶碳化硅烧结材料，所述材料的总孔隙率小于所述材料体积的2％，并且除游离碳外的碳化硅质量含量为至少99％，其中在所述材料中，具有β型晶型的SiC含量与具有α型晶型的SiC含量的质量比小于2。还公开了生产这种材料的方法。
Method for producing high purity dense sintered SIC material
The invention relates to a polycrystalline silicon carbide sintered material consisting of silicon carbide grains having a median equivalent diameter of 1 to 10 microns, said material having a total porosity of less than 2% of the material volume and a silicon carbide mass content other than free carbon of at least 99%, the mass ratio of the content of SiC having a beta-form crystal form to the content of SiC having an alpha-form crystal form is less than 2. Methods of producing such materials are also disclosed.
本发明涉及由中值当量直径为1至10微米的碳化硅晶粒组成的多晶碳化硅烧结材料，所述材料的总孔隙率小于所述材料体积的2％，并且除游离碳外的碳化硅质量含量为至少99％，其中在所述材料中，具有β型晶型的SiC含量与具有α型晶型的SiC含量的质量比小于2。还公开了生产这种材料的方法。
Method for producing high purity dense sintered SIC material
生产高纯度致密烧结SIC材料的方法
MASSO GIUSEPPE (Autor:in) / BOUSQUET CHRISTOPHE (Autor:in)
27.02.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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