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Diamond polishing method based on plasma etching and modification effect
The invention provides a diamond polishing method based on plasma etching and modification effects. The diamond polishing method comprises the steps that a to-be-polished diamond is placed above a rigid polishing disc through a clamp; a plurality of through holes penetrating up and down are formed in the rigid polishing disc; controlling the diamond and the rigid polishing disk to rotate in opposite directions; heating the diamond by using atmospheric inductively coupled plasma containing oxygen free radicals and hydroxyl free radicals; and when the diamond is heated to an instantaneous temperature which exceeds a critical transformation temperature corresponding to surface atom differentiation etching, generating atom selective etching and modification effects, and finishing polishing of the diamond. In the diamond polishing method, atmospheric inductively coupled plasma containing high-concentration and high-activity oxygen free radicals and hydroxyl free radicals is applied, and planarization treatment on the diamond surface is achieved by combining atom selective etching removal and hydroxyl modified polishing removal. And the polishing device is simplified while the polishing efficiency of the diamond is improved.
本发明提供了一种基于等离子体刻蚀和改性作用的金刚石抛光方法,包括:通过夹具将待抛光的金刚石置于刚性抛光盘上方;刚性抛光盘上设置有多个贯通上下的通孔;控制金刚石和刚性抛光盘以相反方向旋转;使包含氧自由基与羟基自由基的大气电感耦合等离子体对金刚石进行加热;当加热到瞬时温度超过表面原子差异化刻蚀所对应的临界转变温度时,产生原子选择性刻蚀和改性作用,完成对金刚石的抛光。本发明在金刚石抛光方法中运用包含高浓度高活性的氧自由基和羟基自由基的大气电感耦合等离子体,通过结合原子选择性刻蚀去除和羟基改性抛光去除实现对金刚石表面的平坦化处理,在提高对金刚石的抛光效率的同时简化了抛光装置。
Diamond polishing method based on plasma etching and modification effect
The invention provides a diamond polishing method based on plasma etching and modification effects. The diamond polishing method comprises the steps that a to-be-polished diamond is placed above a rigid polishing disc through a clamp; a plurality of through holes penetrating up and down are formed in the rigid polishing disc; controlling the diamond and the rigid polishing disk to rotate in opposite directions; heating the diamond by using atmospheric inductively coupled plasma containing oxygen free radicals and hydroxyl free radicals; and when the diamond is heated to an instantaneous temperature which exceeds a critical transformation temperature corresponding to surface atom differentiation etching, generating atom selective etching and modification effects, and finishing polishing of the diamond. In the diamond polishing method, atmospheric inductively coupled plasma containing high-concentration and high-activity oxygen free radicals and hydroxyl free radicals is applied, and planarization treatment on the diamond surface is achieved by combining atom selective etching removal and hydroxyl modified polishing removal. And the polishing device is simplified while the polishing efficiency of the diamond is improved.
本发明提供了一种基于等离子体刻蚀和改性作用的金刚石抛光方法,包括:通过夹具将待抛光的金刚石置于刚性抛光盘上方;刚性抛光盘上设置有多个贯通上下的通孔;控制金刚石和刚性抛光盘以相反方向旋转;使包含氧自由基与羟基自由基的大气电感耦合等离子体对金刚石进行加热;当加热到瞬时温度超过表面原子差异化刻蚀所对应的临界转变温度时,产生原子选择性刻蚀和改性作用,完成对金刚石的抛光。本发明在金刚石抛光方法中运用包含高浓度高活性的氧自由基和羟基自由基的大气电感耦合等离子体,通过结合原子选择性刻蚀去除和羟基改性抛光去除实现对金刚石表面的平坦化处理,在提高对金刚石的抛光效率的同时简化了抛光装置。
Diamond polishing method based on plasma etching and modification effect
一种基于等离子体刻蚀和改性作用的金刚石抛光方法
DENG HUI (Autor:in) / XIAO YUXI (Autor:in) / HE QUANPENG (Autor:in)
22.03.2024
Patent
Elektronische Ressource
Chinesisch
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