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Bismuth telluride-based thermoelectric material and preparation method and application thereof
The invention relates to the technical field of thermoelectric materials, and discloses a bismuth telluride-based thermoelectric material and a preparation method and application thereof. Comprising a substrate and a doping material, the substrate is bismuth telluride; the doping material is selected from a binary compound material. According to the thermoelectric material disclosed by the invention, the binary compound material is doped into the matrix material, and the zone melting, ultrasonic stripping and hot pressing sintering processes are combined, so that the electric transport performance is improved, the power factor is improved, many defects such as dislocation and grain boundary are introduced, the lattice thermal conductivity is effectively reduced, and the thermoelectric performance is optimized; and meanwhile, the Vickers hardness of the bismuth telluride-based thermoelectric material is greatly improved.
本发明涉及热电材料技术领域,申请公开了一种碲化铋基热电材料及其制备方法和应用。包括基体和掺杂材料;所述基体为碲化铋;所述掺杂材料选自二元化合物材料。本申请热电材料通过在基体材料中掺入二元化合物材料并结合区熔,超声剥离和热压烧结工艺,改善了电输运性能提升了功率因子,并引入众多的位错,晶界等缺陷有效降低了晶格热导率,优化了热电性能;与此同时极大的提升了碲化铋基热电材料的维氏硬度。
Bismuth telluride-based thermoelectric material and preparation method and application thereof
The invention relates to the technical field of thermoelectric materials, and discloses a bismuth telluride-based thermoelectric material and a preparation method and application thereof. Comprising a substrate and a doping material, the substrate is bismuth telluride; the doping material is selected from a binary compound material. According to the thermoelectric material disclosed by the invention, the binary compound material is doped into the matrix material, and the zone melting, ultrasonic stripping and hot pressing sintering processes are combined, so that the electric transport performance is improved, the power factor is improved, many defects such as dislocation and grain boundary are introduced, the lattice thermal conductivity is effectively reduced, and the thermoelectric performance is optimized; and meanwhile, the Vickers hardness of the bismuth telluride-based thermoelectric material is greatly improved.
本发明涉及热电材料技术领域,申请公开了一种碲化铋基热电材料及其制备方法和应用。包括基体和掺杂材料;所述基体为碲化铋;所述掺杂材料选自二元化合物材料。本申请热电材料通过在基体材料中掺入二元化合物材料并结合区熔,超声剥离和热压烧结工艺,改善了电输运性能提升了功率因子,并引入众多的位错,晶界等缺陷有效降低了晶格热导率,优化了热电性能;与此同时极大的提升了碲化铋基热电材料的维氏硬度。
Bismuth telluride-based thermoelectric material and preparation method and application thereof
一种碲化铋基热电材料及其制备方法和应用
WU GANG (Autor:in) / LIU GUOQIANG (Autor:in) / TAN XIAOJIAN (Autor:in) / JIANG JUN (Autor:in)
26.03.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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