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Conductive In2Se3 target material and preparation method thereof
The invention belongs to the field of semiconductors, and particularly relates to a preparation method of a conductive In2Se3 target material, which comprises the following steps of: 1, mixing Cu2Se powder and In2Se3 powder to obtain mixed powder; 2, the mixed powder is subjected to mold pressing, and a target blank is obtained; 3, in a vacuum furnace, the temperature is increased to 700-800 DEG C in a vacuum state, and then heat preservation is conducted for 30-60 min in the vacuum state; then, the pressure in the furnace is increased to 35-40 MPa, and heat preservation is conducted for 60-90 min; reducing pressure and stopping heating after heat preservation to obtain a target material; and the weight of the Cu2Se powder accounts for 2-10% of the total weight of the Cu2Se powder and the In2Se3 powder. According to the method, by controlling the doping amount of Cu2Se and by means of a variable-pressure constant-temperature mode, a product with the relative density larger than 96%, preferably larger than 97% and the resistivity smaller than 1250 kilohm/cm, preferably smaller than 900 kilohm/cm can be obtained. In addition, the invention also provides a conductive In2Se3 target material.
本发明属于半导体领域，具体涉及一种导电In2Se3靶材的制备方法，包括如下方法：步骤1：将Cu2Se粉末和In2Se3粉末混合，得到混合粉末；步骤2：将混合粉末进行模压，得到靶坯；步骤3：在真空炉中，于真空状态下升温至700～800℃，然后真空状态下，保温30～60min；接着将炉内压力升高到35～40MPa，保温60～90min；保温结束后降压并停止加热得到靶材；所述Cu2Se粉末占Cu2Se粉末和In2Se3粉末总重量的2～10％。该方法通过控制Cu2Se的掺杂量，同时通过变压恒温的方式，可以得到相对密度大于96％，优选大于97％、阻率小于1250KΩ/cm，优选小于900KΩ/cm的产品。此外，本发明还提供了一种导电In2Se3靶材。
Conductive In2Se3 target material and preparation method thereof
The invention belongs to the field of semiconductors, and particularly relates to a preparation method of a conductive In2Se3 target material, which comprises the following steps of: 1, mixing Cu2Se powder and In2Se3 powder to obtain mixed powder; 2, the mixed powder is subjected to mold pressing, and a target blank is obtained; 3, in a vacuum furnace, the temperature is increased to 700-800 DEG C in a vacuum state, and then heat preservation is conducted for 30-60 min in the vacuum state; then, the pressure in the furnace is increased to 35-40 MPa, and heat preservation is conducted for 60-90 min; reducing pressure and stopping heating after heat preservation to obtain a target material; and the weight of the Cu2Se powder accounts for 2-10% of the total weight of the Cu2Se powder and the In2Se3 powder. According to the method, by controlling the doping amount of Cu2Se and by means of a variable-pressure constant-temperature mode, a product with the relative density larger than 96%, preferably larger than 97% and the resistivity smaller than 1250 kilohm/cm, preferably smaller than 900 kilohm/cm can be obtained. In addition, the invention also provides a conductive In2Se3 target material.
本发明属于半导体领域，具体涉及一种导电In2Se3靶材的制备方法，包括如下方法：步骤1：将Cu2Se粉末和In2Se3粉末混合，得到混合粉末；步骤2：将混合粉末进行模压，得到靶坯；步骤3：在真空炉中，于真空状态下升温至700～800℃，然后真空状态下，保温30～60min；接着将炉内压力升高到35～40MPa，保温60～90min；保温结束后降压并停止加热得到靶材；所述Cu2Se粉末占Cu2Se粉末和In2Se3粉末总重量的2～10％。该方法通过控制Cu2Se的掺杂量，同时通过变压恒温的方式，可以得到相对密度大于96％，优选大于97％、阻率小于1250KΩ/cm，优选小于900KΩ/cm的产品。此外，本发明还提供了一种导电In2Se3靶材。
Conductive In2Se3 target material and preparation method thereof
一种导电In2Se3靶材及其制备方法
SHEN WENXING (Autor:in) / BAI PINGPING (Autor:in) / TONG PEIYUN (Autor:in)
29.03.2024
Patent
Elektronische Ressource
Chinesisch
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