Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Non-doped conductive zinc telluride target material and preparation method thereof
The invention belongs to the technical field of sputtering target material preparation, and discloses a non-doped conductive zinc telluride target material and a preparation method thereof. The preparation method comprises the following steps that zinc telluride powder, tellurium powder and zinc powder are evenly mixed, the weight ratio of the zinc telluride powder is 70%-90%, and the molar ratio of the tellurium powder to the zinc powder is 1: 1; putting the obtained mixed powder into a tubular furnace, heating to 300-350 DEG C in an inert atmosphere, and pre-sintering; and the pre-sintered powder is put into a mold, then the mold is put into a vacuum hot pressing furnace, the temperature is increased to 500-550 DEG C for vacuum hot pressing treatment, the treated material is discharged out of the furnace after being cooled along with the furnace, a blank target material is obtained, then the blank target material is subjected to post-processing treatment, and the non-doped conductive zinc telluride target material finished product is obtained. According to the preparation method, doping of other elements is avoided, good uniformity can be achieved under the condition that the hot pressing temperature and pressure are relatively low, and the obtained zinc telluride target material is high in relative density and has good conductivity.
本发明属于溅射靶材制备技术领域，公开了一种非掺杂导电碲化锌靶材及其制备方法。所述制备方法包括如下步骤：将碲化锌粉、碲粉和锌粉混合均匀，其中碲化锌粉重量占比为70％～90％，碲粉与锌粉摩尔比为1:1；将所得混合粉末放入管式炉中，惰性气氛下加热至300～350℃进行预烧结；将预烧结后的粉末装入模具中，然后放入真空热压炉内，升温至500～550℃进行真空热压处理，处理后的物料随炉降温后出炉，得到毛坯靶材，然后将毛坯靶材进行后加工处理，得到非掺杂导电碲化锌靶材成品。本发明制备方法无其它元素掺杂，在热压温度及压力相对较低的情况下即可实现良好的均匀性，所得碲化锌靶材相对密度高，且具有良好的导电性。
Non-doped conductive zinc telluride target material and preparation method thereof
The invention belongs to the technical field of sputtering target material preparation, and discloses a non-doped conductive zinc telluride target material and a preparation method thereof. The preparation method comprises the following steps that zinc telluride powder, tellurium powder and zinc powder are evenly mixed, the weight ratio of the zinc telluride powder is 70%-90%, and the molar ratio of the tellurium powder to the zinc powder is 1: 1; putting the obtained mixed powder into a tubular furnace, heating to 300-350 DEG C in an inert atmosphere, and pre-sintering; and the pre-sintered powder is put into a mold, then the mold is put into a vacuum hot pressing furnace, the temperature is increased to 500-550 DEG C for vacuum hot pressing treatment, the treated material is discharged out of the furnace after being cooled along with the furnace, a blank target material is obtained, then the blank target material is subjected to post-processing treatment, and the non-doped conductive zinc telluride target material finished product is obtained. According to the preparation method, doping of other elements is avoided, good uniformity can be achieved under the condition that the hot pressing temperature and pressure are relatively low, and the obtained zinc telluride target material is high in relative density and has good conductivity.
本发明属于溅射靶材制备技术领域，公开了一种非掺杂导电碲化锌靶材及其制备方法。所述制备方法包括如下步骤：将碲化锌粉、碲粉和锌粉混合均匀，其中碲化锌粉重量占比为70％～90％，碲粉与锌粉摩尔比为1:1；将所得混合粉末放入管式炉中，惰性气氛下加热至300～350℃进行预烧结；将预烧结后的粉末装入模具中，然后放入真空热压炉内，升温至500～550℃进行真空热压处理，处理后的物料随炉降温后出炉，得到毛坯靶材，然后将毛坯靶材进行后加工处理，得到非掺杂导电碲化锌靶材成品。本发明制备方法无其它元素掺杂，在热压温度及压力相对较低的情况下即可实现良好的均匀性，所得碲化锌靶材相对密度高，且具有良好的导电性。
Non-doped conductive zinc telluride target material and preparation method thereof
一种非掺杂导电碲化锌靶材及其制备方法
WEN CHONGBIN (Autor:in) / YU FANG (Autor:in) / ZHU LIU (Autor:in) / TONG PEIYUN (Autor:in) / LUO HAIQI (Autor:in) / ZENG CHENGLIANG (Autor:in)
31.05.2022
Patent
Elektronische Ressource
Chinesisch
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