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Quaternary boride high-entropy ceramic and preparation method thereof
The invention provides quaternary boride high-entropy ceramic and a preparation method thereof, and belongs to the field of high-entropy ceramic. The preparation method comprises the following steps: mixing HfO2, ZrO2, Ta2O5, TiO2, B and a solvent, and carrying out wet ball milling to obtain slurry; and sequentially carrying out vacuum sintering and spark plasma sintering on the slurry to obtain the quaternary boride high-entropy ceramic. After the melting point, the density and the thermal expansion coefficient of the oxide are comprehensively considered, four materials of Hf, Zr, Ta and Ti are designed to serve as metal components, and the quaternary boride high-entropy ceramic is synthesized; the quaternary boride high-entropy ceramic with lower oxygen content and higher density is obtained through two-step sintering of vacuum sintering and spark plasma sintering; compared with B4C and C serving as a boron source and a C source, boron serving as a reducing agent introduces less miscellaneous carbon, the obtained high-entropy ceramic is purer, meanwhile, defects caused by gasification in the miscellaneous carbon oxidation process are avoided, and the quaternary boride high-entropy ceramic with excellent oxidation resistance is obtained.
本发明提供了一种四元硼化物高熵陶瓷及其制备方法，属于高熵陶瓷领域。本发明将HfO2、ZrO2、Ta2O5、TiO2、B和溶剂混合进行湿法球磨，得到浆料；将所述浆料依次进行真空烧结和放电等离子烧结，得到所述四元硼化物高熵陶瓷。本发明综合考虑了氧化物熔点、致密度、热膨胀系数后，设计得到Hf、Zr、Ta、Ti四种材料作为金属组元，合成四元硼化物高熵陶瓷；通过真空烧结和放电等离子烧结两步烧结，得到氧含量更低，致密度更高的四元硼化物高熵陶瓷；硼作为还原剂，相比于B4C和C作硼源和C源时有更少的杂碳引入，得到的高熵陶瓷更纯，同时不会有杂碳氧化过程中气化导致缺陷，得到了抗氧化性能优异的四元硼化物高熵陶瓷。
Quaternary boride high-entropy ceramic and preparation method thereof
The invention provides quaternary boride high-entropy ceramic and a preparation method thereof, and belongs to the field of high-entropy ceramic. The preparation method comprises the following steps: mixing HfO2, ZrO2, Ta2O5, TiO2, B and a solvent, and carrying out wet ball milling to obtain slurry; and sequentially carrying out vacuum sintering and spark plasma sintering on the slurry to obtain the quaternary boride high-entropy ceramic. After the melting point, the density and the thermal expansion coefficient of the oxide are comprehensively considered, four materials of Hf, Zr, Ta and Ti are designed to serve as metal components, and the quaternary boride high-entropy ceramic is synthesized; the quaternary boride high-entropy ceramic with lower oxygen content and higher density is obtained through two-step sintering of vacuum sintering and spark plasma sintering; compared with B4C and C serving as a boron source and a C source, boron serving as a reducing agent introduces less miscellaneous carbon, the obtained high-entropy ceramic is purer, meanwhile, defects caused by gasification in the miscellaneous carbon oxidation process are avoided, and the quaternary boride high-entropy ceramic with excellent oxidation resistance is obtained.
本发明提供了一种四元硼化物高熵陶瓷及其制备方法，属于高熵陶瓷领域。本发明将HfO2、ZrO2、Ta2O5、TiO2、B和溶剂混合进行湿法球磨，得到浆料；将所述浆料依次进行真空烧结和放电等离子烧结，得到所述四元硼化物高熵陶瓷。本发明综合考虑了氧化物熔点、致密度、热膨胀系数后，设计得到Hf、Zr、Ta、Ti四种材料作为金属组元，合成四元硼化物高熵陶瓷；通过真空烧结和放电等离子烧结两步烧结，得到氧含量更低，致密度更高的四元硼化物高熵陶瓷；硼作为还原剂，相比于B4C和C作硼源和C源时有更少的杂碳引入，得到的高熵陶瓷更纯，同时不会有杂碳氧化过程中气化导致缺陷，得到了抗氧化性能优异的四元硼化物高熵陶瓷。
Quaternary boride high-entropy ceramic and preparation method thereof
一种四元硼化物高熵陶瓷及其制备方法
05.04.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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