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High-purity Ti3SiC2 block ceramic and preparation method thereof
The invention relates to a high-purity Ti3SiC2 block ceramic and a preparation method thereof, and aims to solve the problem that the content of a Ti3SiC2 phase in the RMI Ti3SiC2 block ceramic prepared by a reactive melt infiltration (RMI) process at present (the highest volume fraction reported in the existing literature is 85 vol.%), the high-purity Ti3SiC2 block ceramic is prepared by regulating and controlling the ratio of original powder, controlling the reaction temperature and introducing mixed powder of Y2O3 and Al2O3 as a reaction aid. The method further promotes the generation of the Ti3SiC2 phase in the product, the content of the Ti3SiC2 phase in the RMI Ti3SiC2 block ceramic is increased to 98 vol.%, and the purity can reach and exceed the purity of the Ti3SiC2 phase in HP Ti3SiC2 block ceramic prepared by a hot pressing process (HP) commercially at present.
本发明涉及一种高纯度Ti3SiC2块体陶瓷及其制备方法,针对当前采用反应熔体渗透工艺(RMI)制备的RMI Ti3SiC2块体陶瓷中Ti3SiC2相含量较低的问题(已有文献报道体积分数最高为85vol.%),通过“调控原始粉料配比”、“控制反应温度”,并且“引入Y2O3和Al2O3混合粉体作为反应助剂”,进一步促进了产物中Ti3SiC2相的生成,将RMI Ti3SiC2块体陶瓷中Ti3SiC2相含量提高到了98vol.%,该纯度可以达到并且超过当前商业上采用热压工艺(HP)制备的HP Ti3SiC2块体陶瓷中Ti3SiC2相纯度。
High-purity Ti3SiC2 block ceramic and preparation method thereof
The invention relates to a high-purity Ti3SiC2 block ceramic and a preparation method thereof, and aims to solve the problem that the content of a Ti3SiC2 phase in the RMI Ti3SiC2 block ceramic prepared by a reactive melt infiltration (RMI) process at present (the highest volume fraction reported in the existing literature is 85 vol.%), the high-purity Ti3SiC2 block ceramic is prepared by regulating and controlling the ratio of original powder, controlling the reaction temperature and introducing mixed powder of Y2O3 and Al2O3 as a reaction aid. The method further promotes the generation of the Ti3SiC2 phase in the product, the content of the Ti3SiC2 phase in the RMI Ti3SiC2 block ceramic is increased to 98 vol.%, and the purity can reach and exceed the purity of the Ti3SiC2 phase in HP Ti3SiC2 block ceramic prepared by a hot pressing process (HP) commercially at present.
本发明涉及一种高纯度Ti3SiC2块体陶瓷及其制备方法,针对当前采用反应熔体渗透工艺(RMI)制备的RMI Ti3SiC2块体陶瓷中Ti3SiC2相含量较低的问题(已有文献报道体积分数最高为85vol.%),通过“调控原始粉料配比”、“控制反应温度”,并且“引入Y2O3和Al2O3混合粉体作为反应助剂”,进一步促进了产物中Ti3SiC2相的生成,将RMI Ti3SiC2块体陶瓷中Ti3SiC2相含量提高到了98vol.%,该纯度可以达到并且超过当前商业上采用热压工艺(HP)制备的HP Ti3SiC2块体陶瓷中Ti3SiC2相纯度。
High-purity Ti3SiC2 block ceramic and preparation method thereof
一种高纯度Ti3SiC2块体陶瓷及其制备方法
LI XIAOQIANG (Autor:in) / ZHU WENJIE (Autor:in) / ZHENG CE (Autor:in) / REN YUWEI (Autor:in) / WEI CHONG (Autor:in) / ZHANG CHENG (Autor:in)
09.04.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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