Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
IGZO SPUTTERING TARGET
Provided is an IGZO sputtering target which is suppressed in arcing, particle increase, and the like during sputtering, and which has a high relative density. This IGZO sputtering target contains indium (In), calcium (Ga), zinc (Zn), zirconium (Zr), and oxygen (O), with the remainder comprising unavoidable impurities, contains less than 20 ppm by mass of Zr, and has a relative density of 95% or more.
本发明提供一种抑制溅射时的电弧、微粒増加等，并且相对密度高的IGZO溅射靶。该IGZO溅射靶含有铟(In)、钙(Ga)、锌(Zn)、锆(Zr)及氧(O)，余量由不可避免的杂质组成，含有小于20质量ppm的Zr，相对密度为95％以上。
IGZO SPUTTERING TARGET
Provided is an IGZO sputtering target which is suppressed in arcing, particle increase, and the like during sputtering, and which has a high relative density. This IGZO sputtering target contains indium (In), calcium (Ga), zinc (Zn), zirconium (Zr), and oxygen (O), with the remainder comprising unavoidable impurities, contains less than 20 ppm by mass of Zr, and has a relative density of 95% or more.
本发明提供一种抑制溅射时的电弧、微粒増加等，并且相对密度高的IGZO溅射靶。该IGZO溅射靶含有铟(In)、钙(Ga)、锌(Zn)、锆(Zr)及氧(O)，余量由不可避免的杂质组成，含有小于20质量ppm的Zr，相对密度为95％以上。
IGZO SPUTTERING TARGET
IGZO溅射靶
MURAI KAZUTAKA (Autor:in) / OSADA KOZO (Autor:in)
16.04.2024
Patent
Elektronische Ressource
Chinesisch