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Novel low-dielectric-constant microwave dielectric ceramic and preparation method thereof
The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a novel low-dielectric-constant microwave dielectric ceramic and a preparation method thereof. The sintering temperature of the microwave dielectric ceramic material provided by the invention is 1375-1450 DEG C, the dielectric constant is 9-12, the highest quality factor can reach 18276 GHz, and the temperature coefficient of resonance frequency is adjustable in the range of-21 ppm/DEG C to-27 ppm/DEG C. Raw materials of Er2O3, Yb2O3, MgO and Ga2O3 are mixed according to the chemical general formula AMgGaO4, A is Er or Yb, and then the single phase ceramic is prepared through a solid phase sintering method. The prepared microwave dielectric ceramic material is low in dielectric constant, the preparation method is simple, industrial production is easy, and the microwave dielectric ceramic material is a novel microwave dielectric ceramic system with potential application value.
本发明属于电子陶瓷及其制造领域，涉及一种新型低介电常数微波介质陶瓷及其制备方法。本发明提供的微波介质陶瓷材料烧结温度为1375～1450℃，介电常数9～12，品质因素最高可达18276GHz，谐振频率温度系数在‑21ppm/℃～‑27ppm/℃范围内可调。将原料Er2O3、Yb2O3、MgO和Ga2O3按照化学通式AMgGaO4配料，其中A＝Er或Yb，再经固相烧结法制得单一物相陶瓷。本发明所制备的微波介质陶瓷材料介电常数低，制备方法简单，易于工业化生产，是一种具有潜在应用价值的新型微波介质陶瓷体系。
Novel low-dielectric-constant microwave dielectric ceramic and preparation method thereof
The invention belongs to the field of electronic ceramics and manufacturing thereof, and relates to a novel low-dielectric-constant microwave dielectric ceramic and a preparation method thereof. The sintering temperature of the microwave dielectric ceramic material provided by the invention is 1375-1450 DEG C, the dielectric constant is 9-12, the highest quality factor can reach 18276 GHz, and the temperature coefficient of resonance frequency is adjustable in the range of-21 ppm/DEG C to-27 ppm/DEG C. Raw materials of Er2O3, Yb2O3, MgO and Ga2O3 are mixed according to the chemical general formula AMgGaO4, A is Er or Yb, and then the single phase ceramic is prepared through a solid phase sintering method. The prepared microwave dielectric ceramic material is low in dielectric constant, the preparation method is simple, industrial production is easy, and the microwave dielectric ceramic material is a novel microwave dielectric ceramic system with potential application value.
本发明属于电子陶瓷及其制造领域，涉及一种新型低介电常数微波介质陶瓷及其制备方法。本发明提供的微波介质陶瓷材料烧结温度为1375～1450℃，介电常数9～12，品质因素最高可达18276GHz，谐振频率温度系数在‑21ppm/℃～‑27ppm/℃范围内可调。将原料Er2O3、Yb2O3、MgO和Ga2O3按照化学通式AMgGaO4配料，其中A＝Er或Yb，再经固相烧结法制得单一物相陶瓷。本发明所制备的微波介质陶瓷材料介电常数低，制备方法简单，易于工业化生产，是一种具有潜在应用价值的新型微波介质陶瓷体系。
Novel low-dielectric-constant microwave dielectric ceramic and preparation method thereof
一种新型低介电常数微波介质陶瓷及其制备方法
YANG HONGCHENG (Autor:in) / HUANG XI'ER (Autor:in)
30.04.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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