Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Manufacturing method for clean type silicon carbide substrate
The invention discloses a manufacturing method for a clean type silicon carbide substrate, and relates to the field of semiconductor substrate preparation, and the method specifically comprises the following steps: S1, raw material mixing: firstly putting silicon carbide powder, an adhesive and an additive into a mixing and stirring device for uniform mixing; s2, crushing and sintering: putting the mixture into a mold, and then putting the pressed mixture into a vacuum graphite furnace for high-temperature sintering, S3, cutting, polishing and cleaning: finally, cutting the sintered silicon carbide substrate through a cutting device as required; according to the manufacturing method for the cleaning type silicon carbide substrate, a variable pitch disc rotates to push a guide column and a positioning clamping jaw to get close to the center of a polishing station base through an arc groove in the variable pitch disc, and a second driving part can further push a fixing plate, the positioning clamping jaw, the guide column and the polishing station base to ascend so that the silicon carbide substrate can be more tightly attached to the polishing end of a polishing mechanism in the polishing process; and full polishing of the silicon carbide substrate is realized.
本发明公开了一种用于清洁型碳化硅衬底的制作方法，涉及半导体衬底制备领域，具体包括以下步骤：S1、原料混合：首先将碳化硅粉末、粘接剂和添加剂投入至混合搅拌装置内进行均匀混合；S2、粉碎烧结：接着将混合物投入模具内，然后将压制完成后的混合料投入至真空石墨炉内进行高温烧结，S3、切割、抛光并清洗：最后，先通过切割装置对烧结后的碳化硅衬底按照需求进行切割；该用于清洁型碳化硅衬底的制作方法，通过变距盘自转通过其上的弧槽推动导柱和定位夹爪往抛光工位座中心处靠拢，驱动件二还可推动固定板、定位夹爪、导柱和抛光工位座进行上升，以使得碳化硅衬底抛光中更紧贴抛光机构的抛光端，实现了对碳化硅衬底的充分抛光。
Manufacturing method for clean type silicon carbide substrate
The invention discloses a manufacturing method for a clean type silicon carbide substrate, and relates to the field of semiconductor substrate preparation, and the method specifically comprises the following steps: S1, raw material mixing: firstly putting silicon carbide powder, an adhesive and an additive into a mixing and stirring device for uniform mixing; s2, crushing and sintering: putting the mixture into a mold, and then putting the pressed mixture into a vacuum graphite furnace for high-temperature sintering, S3, cutting, polishing and cleaning: finally, cutting the sintered silicon carbide substrate through a cutting device as required; according to the manufacturing method for the cleaning type silicon carbide substrate, a variable pitch disc rotates to push a guide column and a positioning clamping jaw to get close to the center of a polishing station base through an arc groove in the variable pitch disc, and a second driving part can further push a fixing plate, the positioning clamping jaw, the guide column and the polishing station base to ascend so that the silicon carbide substrate can be more tightly attached to the polishing end of a polishing mechanism in the polishing process; and full polishing of the silicon carbide substrate is realized.
本发明公开了一种用于清洁型碳化硅衬底的制作方法，涉及半导体衬底制备领域，具体包括以下步骤：S1、原料混合：首先将碳化硅粉末、粘接剂和添加剂投入至混合搅拌装置内进行均匀混合；S2、粉碎烧结：接着将混合物投入模具内，然后将压制完成后的混合料投入至真空石墨炉内进行高温烧结，S3、切割、抛光并清洗：最后，先通过切割装置对烧结后的碳化硅衬底按照需求进行切割；该用于清洁型碳化硅衬底的制作方法，通过变距盘自转通过其上的弧槽推动导柱和定位夹爪往抛光工位座中心处靠拢，驱动件二还可推动固定板、定位夹爪、导柱和抛光工位座进行上升，以使得碳化硅衬底抛光中更紧贴抛光机构的抛光端，实现了对碳化硅衬底的充分抛光。
Manufacturing method for clean type silicon carbide substrate
一种用于清洁型碳化硅衬底的制作方法
LI MEIRONG (Autor:in) / ZHANG MENGLONG (Autor:in) / KE XI (Autor:in) / WANG WEIZHE (Autor:in) / WANG CHUANGLEI (Autor:in) / YUAN SHUWEN (Autor:in) / HUANG DONGYUAN (Autor:in) / LI JINGBO (Autor:in)
30.04.2024
Patent
Elektronische Ressource
Chinesisch
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