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Selective laser sintering method for silicon nitride ceramic
The invention relates to the technical field of selective laser sintering, in particular to a selective laser sintering method for silicon nitride ceramic, which comprises the following steps of: designing a target CAD (Computer Aided Design) model; adding at least one additional support structure in the target CAD model to obtain a CAD processing model; the CAD machining model is subjected to slicing treatment and then imported into selective laser sintering molding equipment, and a slicing structure obtained after slicing treatment comprises a target area representing a target workpiece and a supporting area representing an additional supporting structure; forming printing is conducted through selective laser sintering forming equipment to obtain a first ceramic middleware, in the single-layer laser sintering process, the target area is sintered according to first laser power, the supporting area is sintered according to second laser power, and the first laser power is larger than the second laser power; the ceramic middleware is subjected to high-temperature sintering under the protective atmosphere, and a second ceramic middleware is obtained; and removing the additional support structure of the second ceramic middleware.
本发明涉及激光选区烧结技术领域，特别是涉及一种激光选区烧结氮化硅陶瓷方法，所述方法包括：设计目标CAD模型；在目标CAD模型中增加至少一个附加支撑结构，得到CAD加工模型；对CAD加工模型进行切片处理后导入激光选区烧结成型设备中，所述切片处理后得到的切片结构中包括表示目标工件的目标区以及表示附加支撑结构的支撑区；通过激光选区烧结成型设备进行成型打印得到第一陶瓷中间件，在单层激光烧结过程中，依据第一激光功率对目标区烧结，依据第二激光功率对支撑区烧结，所述第一激光功率大于第二激光功率；对陶瓷中间件在保护气氛下进行高温烧结得到第二陶瓷中间件；去除第二陶瓷中间件的附加支撑结构。
Selective laser sintering method for silicon nitride ceramic
The invention relates to the technical field of selective laser sintering, in particular to a selective laser sintering method for silicon nitride ceramic, which comprises the following steps of: designing a target CAD (Computer Aided Design) model; adding at least one additional support structure in the target CAD model to obtain a CAD processing model; the CAD machining model is subjected to slicing treatment and then imported into selective laser sintering molding equipment, and a slicing structure obtained after slicing treatment comprises a target area representing a target workpiece and a supporting area representing an additional supporting structure; forming printing is conducted through selective laser sintering forming equipment to obtain a first ceramic middleware, in the single-layer laser sintering process, the target area is sintered according to first laser power, the supporting area is sintered according to second laser power, and the first laser power is larger than the second laser power; the ceramic middleware is subjected to high-temperature sintering under the protective atmosphere, and a second ceramic middleware is obtained; and removing the additional support structure of the second ceramic middleware.
本发明涉及激光选区烧结技术领域，特别是涉及一种激光选区烧结氮化硅陶瓷方法，所述方法包括：设计目标CAD模型；在目标CAD模型中增加至少一个附加支撑结构，得到CAD加工模型；对CAD加工模型进行切片处理后导入激光选区烧结成型设备中，所述切片处理后得到的切片结构中包括表示目标工件的目标区以及表示附加支撑结构的支撑区；通过激光选区烧结成型设备进行成型打印得到第一陶瓷中间件，在单层激光烧结过程中，依据第一激光功率对目标区烧结，依据第二激光功率对支撑区烧结，所述第一激光功率大于第二激光功率；对陶瓷中间件在保护气氛下进行高温烧结得到第二陶瓷中间件；去除第二陶瓷中间件的附加支撑结构。
Selective laser sintering method for silicon nitride ceramic
一种激光选区烧结氮化硅陶瓷方法
TAN QINGWEN (Autor:in) / ZHU FULIN (Autor:in) / XU TAO (Autor:in) / TANG NA (Autor:in) / JIANG JIEYING (Autor:in)
24.05.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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