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Zinc oxide ceramic with adjustable nonlinear coefficient as well as preparation method and application of zinc oxide ceramic
The invention discloses zinc oxide ceramic with an adjustable nonlinear coefficient as well as a preparation method and application thereof, and belongs to the technical field of functional ceramic and preparation thereof. According to the invention, the problem that the existing ZnO-based voltage-sensitive ceramic cannot realize the regulation and control of the nonlinear coefficient is solved. According to the invention, AlN is adopted as an additive to carry out doping modification on ZnO, and a Schottky barrier is constructed in ZnO crystal grains by utilizing the large difference between the conductivity of AlN and the conductivity of ZnO, so that the voltage-sensitive characteristic of ZnO ceramic is induced; alN and ZnO have the same crystal structure, and Al < 3 + > ions easily enter ZnO crystal lattices, so that the aim of improving the nonlinear characteristic by doping is fulfilled, the AlN simultaneously realizes the functions of a pressure-sensitive forming agent and doping modification on ZnO, the doped zinc oxide ceramic with the single-phase cubic sphalerite type zinc oxide structure and the pressure-sensitive characteristic is prepared, the doping content of the AlN is changed, and the voltage-sensitive property of the zinc oxide ceramic is improved. The regulation and control of a nonlinear coefficient and a pressure-sensitive potential gradient are realized, and the application range of the zinc oxide ceramic is widened.
本发明公开了一种非线性系数可调控的氧化锌陶瓷及其制备方法和应用,属于功能陶瓷及其制备技术领域。本发明解决了现有ZnO基压敏陶瓷无法实现非线性系数可调控的问题。本发明采用AlN为添加剂对ZnO进行掺杂改性,利用AlN与ZnO电导率有较大差距,在ZnO晶粒中构建肖特基势垒,诱导ZnO陶瓷的压敏特性;以及AlN与ZnO具有相同的晶体结构,Al3+离子容易进入ZnO晶格,实现掺杂改善非线性特性的目的,使AlN对ZnO同时实现压敏形成剂和掺杂改性作用,制备得到同时具有单相立方闪锌矿型氧化锌结构和压敏特性的掺杂氧化锌陶瓷,改变AlN的掺杂含量,实现非线性系数和压敏电位梯度的调控,拓宽氧化锌陶瓷的应用范围。
Zinc oxide ceramic with adjustable nonlinear coefficient as well as preparation method and application of zinc oxide ceramic
The invention discloses zinc oxide ceramic with an adjustable nonlinear coefficient as well as a preparation method and application thereof, and belongs to the technical field of functional ceramic and preparation thereof. According to the invention, the problem that the existing ZnO-based voltage-sensitive ceramic cannot realize the regulation and control of the nonlinear coefficient is solved. According to the invention, AlN is adopted as an additive to carry out doping modification on ZnO, and a Schottky barrier is constructed in ZnO crystal grains by utilizing the large difference between the conductivity of AlN and the conductivity of ZnO, so that the voltage-sensitive characteristic of ZnO ceramic is induced; alN and ZnO have the same crystal structure, and Al < 3 + > ions easily enter ZnO crystal lattices, so that the aim of improving the nonlinear characteristic by doping is fulfilled, the AlN simultaneously realizes the functions of a pressure-sensitive forming agent and doping modification on ZnO, the doped zinc oxide ceramic with the single-phase cubic sphalerite type zinc oxide structure and the pressure-sensitive characteristic is prepared, the doping content of the AlN is changed, and the voltage-sensitive property of the zinc oxide ceramic is improved. The regulation and control of a nonlinear coefficient and a pressure-sensitive potential gradient are realized, and the application range of the zinc oxide ceramic is widened.
本发明公开了一种非线性系数可调控的氧化锌陶瓷及其制备方法和应用,属于功能陶瓷及其制备技术领域。本发明解决了现有ZnO基压敏陶瓷无法实现非线性系数可调控的问题。本发明采用AlN为添加剂对ZnO进行掺杂改性,利用AlN与ZnO电导率有较大差距,在ZnO晶粒中构建肖特基势垒,诱导ZnO陶瓷的压敏特性;以及AlN与ZnO具有相同的晶体结构,Al3+离子容易进入ZnO晶格,实现掺杂改善非线性特性的目的,使AlN对ZnO同时实现压敏形成剂和掺杂改性作用,制备得到同时具有单相立方闪锌矿型氧化锌结构和压敏特性的掺杂氧化锌陶瓷,改变AlN的掺杂含量,实现非线性系数和压敏电位梯度的调控,拓宽氧化锌陶瓷的应用范围。
Zinc oxide ceramic with adjustable nonlinear coefficient as well as preparation method and application of zinc oxide ceramic
一种非线性系数可调控的氧化锌陶瓷及其制备方法和应用
YU YANG (Autor:in) / CUI JIE (Autor:in) / LIU YITONG (Autor:in) / BU DECHAO (Autor:in) / ZHANG XIAORUI (Autor:in)
28.05.2024
Patent
Elektronische Ressource
Chinesisch
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