Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Seed substrate for epitaxial growth and method for producing same, and semiconductor substrate and method for producing same
The present invention relates to a method for obtaining AlN, AlxGa1-xN (0lt; xlt; 1), a seed substrate for epitaxy and scale-free epitaxial growth of group III nitrides such as GaN, and a method for producing the same. A seed substrate for epitaxial growth is provided with: a support substrate; a planarization layer provided on the upper surface of the support substrate, the planarization layer having a thickness of 0.5-3 [mu] m; and a seed layer provided on the upper surface of the planarization layer. The support substrate includes: a polycrystalline ceramic core of a group III nitride; and an encapsulation layer which encapsulates the core by embedding a surface gap of the core with an oxide, nitride, oxynitride of Al or Si or a mixture thereof, and planarizing the surface gap. The thickness of the encapsulation layer is 0.05-1.5 [mu] m. The seed crystal layer has an OSF (Oxidation Induced Stacking Fault: OSF) of 10 pieces/cm < 2 > or less, and an OSF (Oxidation Induced Stacking Fault: OSF) of 10 pieces/cm < 2 > or less. 111gt, 111gt; the surface layer of the single crystal is provided so as to be 0.1-1.5 [mu] m by means of film transfer.
本发明涉及可得到晶体缺陷少、高品质且廉价的AlN、AlxGa1‑xN(0<111>单晶的表层0.1～1.5μm进行薄膜转印的方式而设置。
Seed substrate for epitaxial growth and method for producing same, and semiconductor substrate and method for producing same
The present invention relates to a method for obtaining AlN, AlxGa1-xN (0lt; xlt; 1), a seed substrate for epitaxy and scale-free epitaxial growth of group III nitrides such as GaN, and a method for producing the same. A seed substrate for epitaxial growth is provided with: a support substrate; a planarization layer provided on the upper surface of the support substrate, the planarization layer having a thickness of 0.5-3 [mu] m; and a seed layer provided on the upper surface of the planarization layer. The support substrate includes: a polycrystalline ceramic core of a group III nitride; and an encapsulation layer which encapsulates the core by embedding a surface gap of the core with an oxide, nitride, oxynitride of Al or Si or a mixture thereof, and planarizing the surface gap. The thickness of the encapsulation layer is 0.05-1.5 [mu] m. The seed crystal layer has an OSF (Oxidation Induced Stacking Fault: OSF) of 10 pieces/cm < 2 > or less, and an OSF (Oxidation Induced Stacking Fault: OSF) of 10 pieces/cm < 2 > or less. 111gt, 111gt; the surface layer of the single crystal is provided so as to be 0.1-1.5 [mu] m by means of film transfer.
本发明涉及可得到晶体缺陷少、高品质且廉价的AlN、AlxGa1‑xN(0<111>单晶的表层0.1～1.5μm进行薄膜转印的方式而设置。
Seed substrate for epitaxial growth and method for producing same, and semiconductor substrate and method for producing same
外延生长用种子基板及其制造方法和半导体基板及其制造方法
KUBOTA YOSHIHIRO (Autor:in) / KONISHI SHIGERU (Autor:in) / MOGI HIROSHI (Autor:in) / HIGUCHI KOICHI (Autor:in)
07.06.2024
Patent
Elektronische Ressource
Chinesisch
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