Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of graphite component composite coating, graphite component and graphite crucible
The invention relates to the technical field of semiconductors, in particular to a preparation method of a graphite component composite coating, a graphite component and a graphite crucible. Comprising the TaN coating and the TaC coating, the TaN coating is arranged between the graphite base material and the TaC coating and plays a role in transition, large thermal stress caused by large thermal expansion coefficient difference between the graphite base material and the TaC coating can be effectively reduced, the stability of the coating on the surface of the graphite component is maintained, and the bonding strength of the coating and the graphite base material is improved. Moreover, in the process of growing the N-type silicon carbide crystal by using the graphite crucible with the composite coating, the N element in the TaN coating is replaced by the carbon element in the environment, and the generated nitrogen is released from the inner side wall of the equal-diameter ring to the edge of the crystal, so that the nitrogen uniformity in the growth environment of the N-type silicon carbide crystal is favorably improved, and the growth efficiency of the N-type silicon carbide crystal is improved. Therefore, the formation of polycrystals, polytypes, defects and cracks at the edge of the crystal is reduced, and the roughness of the edge of the generated crystal and the morphology with a convex middle part and a low edge generated by the crystal are also reduced.
本发明涉及半导体技术领域，特别涉及一种石墨部件复合涂层的制备方法、石墨部件、石墨坩埚。包括TaN涂层和TaC涂层，将TaN涂层设置于石墨基材和TaC涂层之间，起到过渡的作用，能够有效的减少石墨基材和TaC涂层之间由于热膨胀系数相差大导致的较大的热应力，维持石墨部件表面涂层的稳定性，提高了涂层与石墨基材的结合强度。并且，利用具有复合涂层的石墨坩埚生长N型碳化硅晶体的过程中，TaN涂层中的N元素被环境中的碳元素置换出来，生成的氮气从等径环的内侧壁向晶体边缘释放，有助于提高N型碳化硅晶体生长环境中的氮均匀性，从而减少了晶体边缘的多晶、多型、缺陷、裂纹的形成，也降低了生成的晶体边缘的粗糙度和晶体产生的中间突边缘低的形貌。
Preparation method of graphite component composite coating, graphite component and graphite crucible
The invention relates to the technical field of semiconductors, in particular to a preparation method of a graphite component composite coating, a graphite component and a graphite crucible. Comprising the TaN coating and the TaC coating, the TaN coating is arranged between the graphite base material and the TaC coating and plays a role in transition, large thermal stress caused by large thermal expansion coefficient difference between the graphite base material and the TaC coating can be effectively reduced, the stability of the coating on the surface of the graphite component is maintained, and the bonding strength of the coating and the graphite base material is improved. Moreover, in the process of growing the N-type silicon carbide crystal by using the graphite crucible with the composite coating, the N element in the TaN coating is replaced by the carbon element in the environment, and the generated nitrogen is released from the inner side wall of the equal-diameter ring to the edge of the crystal, so that the nitrogen uniformity in the growth environment of the N-type silicon carbide crystal is favorably improved, and the growth efficiency of the N-type silicon carbide crystal is improved. Therefore, the formation of polycrystals, polytypes, defects and cracks at the edge of the crystal is reduced, and the roughness of the edge of the generated crystal and the morphology with a convex middle part and a low edge generated by the crystal are also reduced.
本发明涉及半导体技术领域，特别涉及一种石墨部件复合涂层的制备方法、石墨部件、石墨坩埚。包括TaN涂层和TaC涂层，将TaN涂层设置于石墨基材和TaC涂层之间，起到过渡的作用，能够有效的减少石墨基材和TaC涂层之间由于热膨胀系数相差大导致的较大的热应力，维持石墨部件表面涂层的稳定性，提高了涂层与石墨基材的结合强度。并且，利用具有复合涂层的石墨坩埚生长N型碳化硅晶体的过程中，TaN涂层中的N元素被环境中的碳元素置换出来，生成的氮气从等径环的内侧壁向晶体边缘释放，有助于提高N型碳化硅晶体生长环境中的氮均匀性，从而减少了晶体边缘的多晶、多型、缺陷、裂纹的形成，也降低了生成的晶体边缘的粗糙度和晶体产生的中间突边缘低的形貌。
Preparation method of graphite component composite coating, graphite component and graphite crucible
一种石墨部件复合涂层的制备方法、石墨部件、石墨坩埚
ZHANG ZHENYUAN (Autor:in) / YAN SHOULIANG (Autor:in) / YUAN ZHIJIE (Autor:in) / XU SUOCHENG (Autor:in) / WANG MINGHUA (Autor:in)
14.06.2024
Patent
Elektronische Ressource
Chinesisch
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