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Ceramic heater for semiconductor manufacturing equipment
Disclosed is a ceramic heater for a semiconductor manufacturing apparatus having a volume resistivity at a high temperature and a thermal conductivity at room temperature superior to those of a common ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes: a ceramic substrate including a) aluminum nitride (AIN), b) at least one of magnesium oxide (MgO), aluminum oxide (Al2O3), and spinel (MgAl2O4), c) calcium oxide (CaO), and d) titanium dioxide (TiO2); and a resistive heating element.
公开了一种用于半导体制造设备的陶瓷加热器,该陶瓷加热器具有优于用于半导体制造设备的普通陶瓷加热器的高温下的体积电阻率和室温下的热导率。该用于半导体制造设备的陶瓷加热器包括:陶瓷基板,其包括a)氮化铝(AIN)、b)氧化镁(MgO)、氧化铝(Al2O3)和尖晶石(MgAl2O4)当中的至少一种、c)氧化钙(CaO)和d)二氧化钛(TiO2);以及电阻加热元件。
Ceramic heater for semiconductor manufacturing equipment
Disclosed is a ceramic heater for a semiconductor manufacturing apparatus having a volume resistivity at a high temperature and a thermal conductivity at room temperature superior to those of a common ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes: a ceramic substrate including a) aluminum nitride (AIN), b) at least one of magnesium oxide (MgO), aluminum oxide (Al2O3), and spinel (MgAl2O4), c) calcium oxide (CaO), and d) titanium dioxide (TiO2); and a resistive heating element.
公开了一种用于半导体制造设备的陶瓷加热器,该陶瓷加热器具有优于用于半导体制造设备的普通陶瓷加热器的高温下的体积电阻率和室温下的热导率。该用于半导体制造设备的陶瓷加热器包括:陶瓷基板,其包括a)氮化铝(AIN)、b)氧化镁(MgO)、氧化铝(Al2O3)和尖晶石(MgAl2O4)当中的至少一种、c)氧化钙(CaO)和d)二氧化钛(TiO2);以及电阻加热元件。
Ceramic heater for semiconductor manufacturing equipment
用于半导体制造设备的陶瓷加热器
KIM YUN-HO (Autor:in) / KIM JU-HWAN (Autor:in) / PARK HWAN-YOUNG (Autor:in) / KIM BO-SUNG (Autor:in)
28.06.2024
Patent
Elektronische Ressource
Chinesisch
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