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CERAMIC HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
Disclosed is a ceramic heater for a semiconductor manufacturing apparatus, the ceramic heater having volume resistivity especially at high temperature and thermal conductivity at room temperature that are superior to those of a normal ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes a ceramic substrate including a) aluminum nitride (AIN), b) any one or more among magnesium oxide (MgO), alumina (Al2O3) and spinel (MgAl2O4), c) calcium oxide (CaO) and d) titanium dioxide (TiO2); and a resistive heating element.
CERAMIC HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
Disclosed is a ceramic heater for a semiconductor manufacturing apparatus, the ceramic heater having volume resistivity especially at high temperature and thermal conductivity at room temperature that are superior to those of a normal ceramic heater for a semiconductor manufacturing apparatus. The ceramic heater for a semiconductor manufacturing apparatus includes a ceramic substrate including a) aluminum nitride (AIN), b) any one or more among magnesium oxide (MgO), alumina (Al2O3) and spinel (MgAl2O4), c) calcium oxide (CaO) and d) titanium dioxide (TiO2); and a resistive heating element.
CERAMIC HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
KIM YUN HO (Autor:in) / KIM JOO HWAN (Autor:in) / PARK HWAN YOUNG (Autor:in) / KIM BO SUNG (Autor:in)
26.12.2024
Patent
Elektronische Ressource
Englisch
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