Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
High-temperature-resistant aluminum nitride substrate
The invention discloses a high-temperature-resistant aluminum nitride substrate, and belongs to the technical field of aluminum nitride substrates. The invention discloses a high-temperature-resistant aluminum nitride substrate. Raw materials are prepared, boehmite and cane sugar are adopted as the raw materials, high-activity aluminum nitride is obtained through hot stirring, spray drying and high-temperature nitriding operation, and then the aluminum nitride substrate is formed through a series of operation of low-temperature carbon removal, ball milling, vacuum defoaming, tape casting, drying, degumming and high-temperature sintering, so that the raw materials low in cost can be adopted, and the cost is reduced. A high-activity precursor is obtained through liquid-phase homogenization mixing, aluminum nitride with controllable particle size, controllable morphology, high hydrolysis resistance and high thermal conductivity is finally obtained through 1500 DEG C high-temperature atmosphere sintering and a special carbon removal process, and meanwhile, the thermal conductivity of aluminum nitride is higher than that of aluminum oxide, so that the aluminum nitride can meet the requirement of a bearing substrate of a small-sized electronic part; and stable performance of a miniaturized electronic product is ensured.
本发明公开了一种耐高温氮化铝基板，属于氮化铝基板技术领域。一种耐高温氮化铝基板包括以下步骤；准备原材料，通过采用勃姆石和蔗糖为原料，然后经过热搅拌、喷雾干燥、高温氮化操作获得高活性的氮化铝，然后经过低温除碳、球磨、真空除泡、流延成型、干燥、脱胶和高温烧结这一系列操作形成氮化铝基板，这样可以采用成本低的原料，经过液相均一化混合，获得高活性态前驱体，再经过1500℃高温气氛烧结和特殊除碳工艺，最终获得粒度可控、形貌可控、抗水解能力强、高热导率的氮化铝，同时氮化铝的热导率比氧化铝的热导率高，可以适应小型化电子零件的承载基板的要求，并保证了小型化的电子产品的性能稳定。
High-temperature-resistant aluminum nitride substrate
The invention discloses a high-temperature-resistant aluminum nitride substrate, and belongs to the technical field of aluminum nitride substrates. The invention discloses a high-temperature-resistant aluminum nitride substrate. Raw materials are prepared, boehmite and cane sugar are adopted as the raw materials, high-activity aluminum nitride is obtained through hot stirring, spray drying and high-temperature nitriding operation, and then the aluminum nitride substrate is formed through a series of operation of low-temperature carbon removal, ball milling, vacuum defoaming, tape casting, drying, degumming and high-temperature sintering, so that the raw materials low in cost can be adopted, and the cost is reduced. A high-activity precursor is obtained through liquid-phase homogenization mixing, aluminum nitride with controllable particle size, controllable morphology, high hydrolysis resistance and high thermal conductivity is finally obtained through 1500 DEG C high-temperature atmosphere sintering and a special carbon removal process, and meanwhile, the thermal conductivity of aluminum nitride is higher than that of aluminum oxide, so that the aluminum nitride can meet the requirement of a bearing substrate of a small-sized electronic part; and stable performance of a miniaturized electronic product is ensured.
本发明公开了一种耐高温氮化铝基板，属于氮化铝基板技术领域。一种耐高温氮化铝基板包括以下步骤；准备原材料，通过采用勃姆石和蔗糖为原料，然后经过热搅拌、喷雾干燥、高温氮化操作获得高活性的氮化铝，然后经过低温除碳、球磨、真空除泡、流延成型、干燥、脱胶和高温烧结这一系列操作形成氮化铝基板，这样可以采用成本低的原料，经过液相均一化混合，获得高活性态前驱体，再经过1500℃高温气氛烧结和特殊除碳工艺，最终获得粒度可控、形貌可控、抗水解能力强、高热导率的氮化铝，同时氮化铝的热导率比氧化铝的热导率高，可以适应小型化电子零件的承载基板的要求，并保证了小型化的电子产品的性能稳定。
High-temperature-resistant aluminum nitride substrate
一种耐高温氮化铝基板
LIU WEIHUA (Autor:in) / LIU QINGFENG (Autor:in)
09.07.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Preparation method of high-purity boron nitride for sintering aluminum nitride substrate
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