Tantalum carbide coating for semiconductor growth and preparation method thereof: Fid-Bau Portal

Tantalum carbide coating for semiconductor growth and preparation method thereof

WANG LIHUAN / FENG XIANGYU / XU XIANGANG

The invention belongs to the technical field of semiconductor material preparation, and relates to preparation of a semiconductor substrate, in particular to a tantalum carbide coating for semiconductor growth and a preparation method of the tantalum carbide coating. Comprising the following steps: uniformly mixing transition layer main material particles, a first sintering aid, a first binder and a first solvent to form a transition layer suspension, placing the transition layer suspension on the surface of a substrate to form a first pre-sintered layer, and then performing first vacuum sintering to enable the first pre-sintered layer to form a transition layer; and uniformly mixing tantalum carbide powder, a second sintering aid, a second binder and a second solvent to form a tantalum carbide layer turbid liquid, placing the substrate with the transition layer prepared on the surface into the tantalum carbide layer turbid liquid for dipping, and then carrying out second vacuum sintering on the dipped substrate, so as to obtain the tantalum carbide composite material, the preparation method provided by the invention can effectively overcome the defects that pores, cracks and the like are easy to appear in the existing tantalum carbide coating product and the production cost is too high.

本发明属于半导体材料制备技术领域，涉及生长半导体基底的制备，具体涉及一种用于半导体生长的碳化钽涂层及其制备方法。包括如下步骤：将过渡层主料颗粒、第一烧结助剂、第一粘结剂及第一溶剂混合均匀形成过渡层悬浊液，将过渡层悬浊液置于基底表面形成第一预烧结层，然后进行第一真空烧结，使第一预烧结层形成过渡层；将碳化钽粉末、第二烧结助剂、第二粘结剂及第二溶剂混合均匀形成碳化钽层悬浊液，将表面制备所述过渡层的基底置于所述碳化钽层悬浊液中进行浸渍，然后将浸渍后的基底进行第二真空烧结，即得；本发明提供的制备方法能够有效解决现有碳化钽涂层制品易出现孔隙与裂纹等缺陷和生产成本过高的弊端。

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