Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
N-type BiSbSe3-based thermoelectric material and preparation method and application thereof
The invention provides an n-type BiSbSe3-based thermoelectric material and a preparation method and application thereof, and belongs to the technical field of thermoelectric materials. The chemical composition of the n-type BiSbSe3-based thermoelectric material provided by the invention is BiSbSe3-x-yBrxIy, in the formula, x is equal to 0.12 to 0.18, and y is equal to 0.04 to 0.06; the n-type BiSbSe3-based thermoelectric material has a full-scale graded defect structure (comprising an atomic-scale zero-dimensional point defect, a nanoscale one-dimensional defect, a micron-scale two-dimensional defect and a micron-scale three-dimensional defect). According to the n-type BiSbSe3-based thermoelectric material provided by the invention, a'full-scale graded defect structure-full-frequency phonon scattering 'mode is constructed based on a phonon engineering strategy, and the lattice thermal conductivity is reduced to the maximum extent; meanwhile, additional electrons are effectively provided by double doping of Br and I, and the conductivity and the thermoelectric figure of merit of the n-type BiSbSe3-based thermoelectric material are remarkably improved.
本发明提供了一种n型BiSbSe3基热电材料及其制备方法和应用，属于热电材料技术领域。本发明提供的n型BiSbSe3基热电材料，化学组成为BiSbSe3‑x‑yBrxIy，其中，x＝0.12～0.18，y＝0.04～0.06；所述n型BiSbSe3基热电材料具有全尺度分级缺陷结构(包括原子级零维点缺陷、纳米级一维缺陷、微米级二维缺陷和微米级三维缺陷)。本发明提供的n型BiSbSe3基热电材料基于声子工程策略，构建了“全尺度分级缺陷结构‑全频声子散射”模式，最大程度降低了晶格热导率；同时Br和I双掺杂有效提供了额外电子，显著提高了n型BiSbSe3基热电材料电导率和热电优值。
N-type BiSbSe3-based thermoelectric material and preparation method and application thereof
The invention provides an n-type BiSbSe3-based thermoelectric material and a preparation method and application thereof, and belongs to the technical field of thermoelectric materials. The chemical composition of the n-type BiSbSe3-based thermoelectric material provided by the invention is BiSbSe3-x-yBrxIy, in the formula, x is equal to 0.12 to 0.18, and y is equal to 0.04 to 0.06; the n-type BiSbSe3-based thermoelectric material has a full-scale graded defect structure (comprising an atomic-scale zero-dimensional point defect, a nanoscale one-dimensional defect, a micron-scale two-dimensional defect and a micron-scale three-dimensional defect). According to the n-type BiSbSe3-based thermoelectric material provided by the invention, a'full-scale graded defect structure-full-frequency phonon scattering 'mode is constructed based on a phonon engineering strategy, and the lattice thermal conductivity is reduced to the maximum extent; meanwhile, additional electrons are effectively provided by double doping of Br and I, and the conductivity and the thermoelectric figure of merit of the n-type BiSbSe3-based thermoelectric material are remarkably improved.
本发明提供了一种n型BiSbSe3基热电材料及其制备方法和应用，属于热电材料技术领域。本发明提供的n型BiSbSe3基热电材料，化学组成为BiSbSe3‑x‑yBrxIy，其中，x＝0.12～0.18，y＝0.04～0.06；所述n型BiSbSe3基热电材料具有全尺度分级缺陷结构(包括原子级零维点缺陷、纳米级一维缺陷、微米级二维缺陷和微米级三维缺陷)。本发明提供的n型BiSbSe3基热电材料基于声子工程策略，构建了“全尺度分级缺陷结构‑全频声子散射”模式，最大程度降低了晶格热导率；同时Br和I双掺杂有效提供了额外电子，显著提高了n型BiSbSe3基热电材料电导率和热电优值。
N-type BiSbSe3-based thermoelectric material and preparation method and application thereof
一种n型BiSbSe3基热电材料及其制备方法和应用
KANG HUIJUN (Autor:in) / WANG TONGMIN (Autor:in) / SHI XIAOWEI (Autor:in) / CHEN ZONGNING (Autor:in) / GUO ENYU (Autor:in) / LU YIPING (Autor:in) / JIE JINCHUAN (Autor:in) / ZHANG YUBO (Autor:in) / CAO ZHIQIANG (Autor:in) / LI TINGJU (Autor:in)
16.07.2024
Patent
Elektronische Ressource
Chinesisch
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