Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of silicon powder-doped silicon nitride ceramic substrate
The invention discloses a preparation method of a silicon powder-doped silicon nitride ceramic substrate, which comprises the following steps: preparing mixed slurry, adding a solvent containing a dispersing agent into a stirring mill, then adding mixed powder for ball milling, and then adding a binder and a plasticizer for ball milling to obtain the mixed slurry; wherein the mixed powder comprises silicon powder; carrying out defoaming treatment, namely, defoaming the mixed slurry for 5-60 minutes under the vacuum degree of 0.1-1 MPa, so as to obtain defoamed slurry; preparing a silicon nitride substrate green body, introducing the defoamed slurry into a casting machine, adjusting the casting speed to 0.02 m/min to 1.0 m/min, setting a multi-stage gradient at the heating temperature of 25 DEG C to 80 DEG C, carrying out casting molding to obtain a silicon nitride green body belt with the thickness of 0.2 mm to 0.3 mm, and cutting and laminating the silicon nitride green body belt to obtain the silicon nitride substrate green body; and nitriding and sintering treatment: sequentially carrying out nitriding treatment and sintering treatment on the silicon nitride substrate blank to obtain the silicon nitride ceramic substrate. The silicon powder is adopted as the raw material, the ball milling time and the charging sequence are optimized, and the obtained silicon nitride ceramic substrate has high heat conductivity and high density.
本发明公开了一种掺杂硅粉的氮化硅陶瓷基片的制备方法，包括步骤：制备混合浆料，将含有分散剂的溶剂加入在搅拌磨中，再加入混合粉体进行球磨，再加入粘结剂和增塑剂进行球磨，得到混合浆料；其中，混合粉体包括硅粉；脱泡处理，在0.1MPa～1MPa真空度下，将混合浆料脱泡5min～60min，得到脱泡浆料；制备氮化硅基片坯体，将脱泡浆料导入流延机，调整流延速度为0.02m/min～1.0m/min，将加热温度在25℃～80℃之间设置多级梯度，流延成型得到厚度在0.2mm～0.3mm的氮化硅生坯带，将氮化硅生坯带切割、叠层，得到氮化硅基片坯体；氮化烧结处理，将氮化硅基片坯体依次进行氮化处理和烧结处理，得到氮化硅陶瓷基片。本发明采用硅粉为原料,优化球磨时间和加料顺序，得到的氮化硅陶瓷基片具有高热导率和高致密度。
Preparation method of silicon powder-doped silicon nitride ceramic substrate
The invention discloses a preparation method of a silicon powder-doped silicon nitride ceramic substrate, which comprises the following steps: preparing mixed slurry, adding a solvent containing a dispersing agent into a stirring mill, then adding mixed powder for ball milling, and then adding a binder and a plasticizer for ball milling to obtain the mixed slurry; wherein the mixed powder comprises silicon powder; carrying out defoaming treatment, namely, defoaming the mixed slurry for 5-60 minutes under the vacuum degree of 0.1-1 MPa, so as to obtain defoamed slurry; preparing a silicon nitride substrate green body, introducing the defoamed slurry into a casting machine, adjusting the casting speed to 0.02 m/min to 1.0 m/min, setting a multi-stage gradient at the heating temperature of 25 DEG C to 80 DEG C, carrying out casting molding to obtain a silicon nitride green body belt with the thickness of 0.2 mm to 0.3 mm, and cutting and laminating the silicon nitride green body belt to obtain the silicon nitride substrate green body; and nitriding and sintering treatment: sequentially carrying out nitriding treatment and sintering treatment on the silicon nitride substrate blank to obtain the silicon nitride ceramic substrate. The silicon powder is adopted as the raw material, the ball milling time and the charging sequence are optimized, and the obtained silicon nitride ceramic substrate has high heat conductivity and high density.
本发明公开了一种掺杂硅粉的氮化硅陶瓷基片的制备方法，包括步骤：制备混合浆料，将含有分散剂的溶剂加入在搅拌磨中，再加入混合粉体进行球磨，再加入粘结剂和增塑剂进行球磨，得到混合浆料；其中，混合粉体包括硅粉；脱泡处理，在0.1MPa～1MPa真空度下，将混合浆料脱泡5min～60min，得到脱泡浆料；制备氮化硅基片坯体，将脱泡浆料导入流延机，调整流延速度为0.02m/min～1.0m/min，将加热温度在25℃～80℃之间设置多级梯度，流延成型得到厚度在0.2mm～0.3mm的氮化硅生坯带，将氮化硅生坯带切割、叠层，得到氮化硅基片坯体；氮化烧结处理，将氮化硅基片坯体依次进行氮化处理和烧结处理，得到氮化硅陶瓷基片。本发明采用硅粉为原料,优化球磨时间和加料顺序，得到的氮化硅陶瓷基片具有高热导率和高致密度。
Preparation method of silicon powder-doped silicon nitride ceramic substrate
一种掺杂硅粉的氮化硅陶瓷基片的制备方法
YAN HUI (Autor:in) / CHEN WENQING (Autor:in) / XU YUE (Autor:in) / WANG GANG (Autor:in) / LU YU (Autor:in) / LI RUI (Autor:in) / WANG YUN (Autor:in) / WU XIANLIANG (Autor:in)
11.10.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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