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ZnBiMnGeO-based voltage-sensitive ceramic material and preparation method thereof
The invention relates to a ZnBiMnGeO-based voltage-sensitive ceramic material and a preparation method of the ZnBiMnGeO-based voltage-sensitive ceramic material. The material is composed of five elements of O, Zn, Bi, Mn and Ge, and under the condition that the total mole number of the four elements of Zn, Bi, Mn and Ge is 100%, the mole percentages of the three elements of Bi, Mn and Ge are 0.5-5%, 1-4% and 0.05-0.5% respectively, and the balance is Zn element. During preparation, a traditional solid-phase sintering process is adopted, the sintering temperature is 875-1000 DEG C, the heat preservation time is 1-6 hours, the pressure-sensitive voltage of the obtained material is 120V/mm-340V/mm, the nonlinear coefficient alpha is greater than 40, and the leakage current density JL is less than 10mu A/cm < 2 >. The ZnO-based voltage-sensitive ceramic is simple in component, good in performance and small in leakage current, reactive power loss of a ZnO-based voltage-sensitive resistor in the using process can be reduced, and production and application cost of the ZnO-based voltage-sensitive resistor can be reduced.
本发明涉及一种ZnBiMnGeO基压敏陶瓷材料及制备方法。该材料由O、Zn、Bi、Mn和Ge五种元素组成，在Zn、Bi、Mn和Ge四种元素总摩尔数为100％的条件下，Bi、Mn和Ge三种元素的摩尔百分比分别为：0.5～5％、1～4％、0.05～0.5％，其余为Zn元素。制备时采用传统固相烧结工艺，烧结温度875～1000℃，保温时间1～6小时，得到的材料压敏电压为120V/mm～340V/mm，非线性系数α大于40，漏电流密度JL小于10μA/cm2。本发明的ZnO基压敏陶瓷，组分简单，性能良好，漏电流小，可减少ZnO基压敏电阻在使用过程中的无功损耗，有利于降低ZnO基压敏电阻的生产及应用成本。
ZnBiMnGeO-based voltage-sensitive ceramic material and preparation method thereof
The invention relates to a ZnBiMnGeO-based voltage-sensitive ceramic material and a preparation method of the ZnBiMnGeO-based voltage-sensitive ceramic material. The material is composed of five elements of O, Zn, Bi, Mn and Ge, and under the condition that the total mole number of the four elements of Zn, Bi, Mn and Ge is 100%, the mole percentages of the three elements of Bi, Mn and Ge are 0.5-5%, 1-4% and 0.05-0.5% respectively, and the balance is Zn element. During preparation, a traditional solid-phase sintering process is adopted, the sintering temperature is 875-1000 DEG C, the heat preservation time is 1-6 hours, the pressure-sensitive voltage of the obtained material is 120V/mm-340V/mm, the nonlinear coefficient alpha is greater than 40, and the leakage current density JL is less than 10mu A/cm < 2 >. The ZnO-based voltage-sensitive ceramic is simple in component, good in performance and small in leakage current, reactive power loss of a ZnO-based voltage-sensitive resistor in the using process can be reduced, and production and application cost of the ZnO-based voltage-sensitive resistor can be reduced.
本发明涉及一种ZnBiMnGeO基压敏陶瓷材料及制备方法。该材料由O、Zn、Bi、Mn和Ge五种元素组成，在Zn、Bi、Mn和Ge四种元素总摩尔数为100％的条件下，Bi、Mn和Ge三种元素的摩尔百分比分别为：0.5～5％、1～4％、0.05～0.5％，其余为Zn元素。制备时采用传统固相烧结工艺，烧结温度875～1000℃，保温时间1～6小时，得到的材料压敏电压为120V/mm～340V/mm，非线性系数α大于40，漏电流密度JL小于10μA/cm2。本发明的ZnO基压敏陶瓷，组分简单，性能良好，漏电流小，可减少ZnO基压敏电阻在使用过程中的无功损耗，有利于降低ZnO基压敏电阻的生产及应用成本。
ZnBiMnGeO-based voltage-sensitive ceramic material and preparation method thereof
一种ZnBiMnGeO基压敏陶瓷材料及其制备方法
ZHAO MING (Autor:in) / CHEN MIAOMIAO (Autor:in) / LIU ZHUOCHENG (Autor:in) / CHOI SEUNG HO (Autor:in) / CHEN HUA (Autor:in) / DU YONGSHENG (Autor:in)
12.11.2024
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
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