Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of high-density indium tin zinc oxide sputtering target material
The invention discloses a preparation method of a high-density indium tin zinc oxide sputtering target material, which comprises the following steps: S1, mixing indium oxide powder, tin oxide powder and zinc oxide powder to obtain mixed powder; then mixing the obtained mixed powder with a dispersing agent, a binding agent and deionized water to obtain ITZO slurry; sequentially carrying out ball milling and sand milling on the ITZO slurry to obtain an ITZO slurry dispersion; s2, the obtained ITZO slurry dispersion is subjected to pressure slip casting, drying and degreasing, and a sputtering target dry biscuit is obtained; and S3, sintering the sputtering target material dry biscuit by adopting a step variable temperature method to obtain the indium tin zinc oxide sputtering target material. The compactness of the prepared indium tin zinc oxide sputtering target material can reach 99.8% or above; according to the method, grain controllability of the ITZO sputtering target material can be achieved by regulating and controlling sintering process parameters, a large-size sputtering target material biscuit can be prepared through a slip casting method, operation is easy and convenient, and cost is saved.
本发明公开了一种高密度铟锡锌氧化物溅射靶材的制备方法,包括以下步骤:S1、将氧化铟粉末、氧化锡粉末和氧化锌粉末混合,得到混合粉体;然后将所得混合粉体与分散剂、粘结剂、去离子水混合,得到ITZO浆料;再对ITZO浆料依次进行球磨、砂磨,得到ITZO浆料分散体;S2、将所得ITZO浆料分散体进行压力注浆成型,干燥、脱脂,得到溅射靶材干素坯;S3、将溅射靶材干素坯采用台阶变温法烧结,得到铟锡锌氧化物溅射靶材。本发明制得的铟锡锌氧化物溅射靶材的致密度可达99.8%以上;其中,通过调控烧结工艺参数,可实现ITZO溅射靶材的晶粒可控,通过注浆成型法可制备大尺寸的溅射靶材素坯,且操作简便,节约成本。
Preparation method of high-density indium tin zinc oxide sputtering target material
The invention discloses a preparation method of a high-density indium tin zinc oxide sputtering target material, which comprises the following steps: S1, mixing indium oxide powder, tin oxide powder and zinc oxide powder to obtain mixed powder; then mixing the obtained mixed powder with a dispersing agent, a binding agent and deionized water to obtain ITZO slurry; sequentially carrying out ball milling and sand milling on the ITZO slurry to obtain an ITZO slurry dispersion; s2, the obtained ITZO slurry dispersion is subjected to pressure slip casting, drying and degreasing, and a sputtering target dry biscuit is obtained; and S3, sintering the sputtering target material dry biscuit by adopting a step variable temperature method to obtain the indium tin zinc oxide sputtering target material. The compactness of the prepared indium tin zinc oxide sputtering target material can reach 99.8% or above; according to the method, grain controllability of the ITZO sputtering target material can be achieved by regulating and controlling sintering process parameters, a large-size sputtering target material biscuit can be prepared through a slip casting method, operation is easy and convenient, and cost is saved.
本发明公开了一种高密度铟锡锌氧化物溅射靶材的制备方法,包括以下步骤:S1、将氧化铟粉末、氧化锡粉末和氧化锌粉末混合,得到混合粉体;然后将所得混合粉体与分散剂、粘结剂、去离子水混合,得到ITZO浆料;再对ITZO浆料依次进行球磨、砂磨,得到ITZO浆料分散体;S2、将所得ITZO浆料分散体进行压力注浆成型,干燥、脱脂,得到溅射靶材干素坯;S3、将溅射靶材干素坯采用台阶变温法烧结,得到铟锡锌氧化物溅射靶材。本发明制得的铟锡锌氧化物溅射靶材的致密度可达99.8%以上;其中,通过调控烧结工艺参数,可实现ITZO溅射靶材的晶粒可控,通过注浆成型法可制备大尺寸的溅射靶材素坯,且操作简便,节约成本。
Preparation method of high-density indium tin zinc oxide sputtering target material
一种高密度铟锡锌氧化物溅射靶材的制备方法
LIU YANG (Autor:in) / SUN BENSHUANG (Autor:in) / ZHAO HETAO (Autor:in) / LIU XIAOKAI (Autor:in) / LIU MIAO (Autor:in) / WANG ZHIJUN (Autor:in) / HE JILIN (Autor:in)
17.12.2024
Patent
Elektronische Ressource
Chinesisch
Zinc-doped indium oxide powder, sputtering target material and preparation method thereof
Europäisches Patentamt | 2022
|Preparation method of high-density zinc oxide doped indium-free target material
Europäisches Patentamt | 2023
|Indium titanium zinc oxide sputtering target material, film thereof and preparation method thereof
Europäisches Patentamt | 2023
|INDIUM OXIDE-ZINC OXIDE (IZO)-BASED SPUTTERING TARGET
Europäisches Patentamt | 2017
|METHOD OF FABRICATING INDIUM ZINC OXIDE SPUTTERING TARGET
Europäisches Patentamt | 2015
|