Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Preparation method of high-density zinc oxide doped indium-free target material
The invention relates to the technical field of target materials used in the solar industry technology, in particular to a high-density zinc oxide doped indium-free target material and a preparation method thereof. The preparation method of the high-density zinc oxide doped indium-free target material comprises the following steps of (1) raw material selection, (2) slurry ball milling, (3) slurry sanding, (4) powder granulation, (5) primary forming, (6) secondary forming and (7) pressure sintering. The invention provides the high-density zinc oxide doped indium-free target material, the relative density is not less than 99.5%, and the high-density zinc oxide doped indium-free target material has the characteristics of good chemical, mechanical and thermal stability and high mobility, and has wide application prospects in the fields of transparent conductive films, chemical gas sensors and the like.
本发明涉及太阳能行业技术所使用靶材技术领域，具体涉及一种高密度氧化锌掺杂无铟靶材及其制备方法，本发明提供的具有高密度氧化锌掺杂无铟靶材的制备方法包括如下步骤：(1)原料选择、(2)浆料球磨、(3)浆料砂磨、(4)粉末造粒、(5)一次成型、(6)二次成型、(7)加压烧结。本发明提供了一种高密度氧化锌掺杂无铟靶材，相对密度不小于99.5％，具有良好的化学、机械、热稳定性、迁移率高的特征，在透明导电薄膜和化学气敏传感器等领域有广泛的应用前景。
Preparation method of high-density zinc oxide doped indium-free target material
The invention relates to the technical field of target materials used in the solar industry technology, in particular to a high-density zinc oxide doped indium-free target material and a preparation method thereof. The preparation method of the high-density zinc oxide doped indium-free target material comprises the following steps of (1) raw material selection, (2) slurry ball milling, (3) slurry sanding, (4) powder granulation, (5) primary forming, (6) secondary forming and (7) pressure sintering. The invention provides the high-density zinc oxide doped indium-free target material, the relative density is not less than 99.5%, and the high-density zinc oxide doped indium-free target material has the characteristics of good chemical, mechanical and thermal stability and high mobility, and has wide application prospects in the fields of transparent conductive films, chemical gas sensors and the like.
本发明涉及太阳能行业技术所使用靶材技术领域，具体涉及一种高密度氧化锌掺杂无铟靶材及其制备方法，本发明提供的具有高密度氧化锌掺杂无铟靶材的制备方法包括如下步骤：(1)原料选择、(2)浆料球磨、(3)浆料砂磨、(4)粉末造粒、(5)一次成型、(6)二次成型、(7)加压烧结。本发明提供了一种高密度氧化锌掺杂无铟靶材，相对密度不小于99.5％，具有良好的化学、机械、热稳定性、迁移率高的特征，在透明导电薄膜和化学气敏传感器等领域有广泛的应用前景。
Preparation method of high-density zinc oxide doped indium-free target material
一种高密度氧化锌掺杂无铟靶材的制备方法
ZENG DUNFENG (Autor:in) / CHEN GUANGYUAN (Autor:in) / WANG ZHIQIANG (Autor:in) / ZENG TAN (Autor:in)
24.11.2023
Patent
Elektronische Ressource
Chinesisch
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