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PZT high-frequency ceramic surface metallization method
The invention relates to the technical field of ceramic metallization, in particular to a PZT high-frequency ceramic surface metallization method, which comprises the following steps: preparing PZT high-frequency ceramic; preparing a ternary transition metal boride transition layer on the surface of the PZT high-frequency ceramic; the ternary transition metal boride transition layer is located in a transition area from typical metal to typical ceramic, the performance of the ternary transition metal boride transition layer is between that of the typical metal and that of the typical ceramic, and a property gap between the metal and the ceramic is effectively bridged; the bonding between the PZT high-frequency ceramic and the metallization layer can be effectively promoted, the thermal stress caused near an interface due to the fact that the property difference of the two materials is too large is effectively relieved, and the bonding strength between the metallization layer and the PZT high-frequency ceramic is improved.
本发明涉及陶瓷金属化技术领域,具体为一种PZT高频陶瓷表面金属化方法,先制备PZT高频陶瓷;在所述PZT高频陶瓷表面制备三元过渡金属硼化物过渡层;最后在三元过渡金属硼化物过渡层表面制备金属化层即可,本申请中三元过渡金属硼化物过渡层处于典型金属向典型陶瓷的过渡区域,性能也介于两者之间,有效弥合了金属和陶瓷之间的性质鸿沟,可以有效地促进PZT高频陶瓷与金属化层间的结合,并有效缓和因两种材料性质差异过大在界面附近造成的热应力,提高金属化层与PZT高频陶瓷间的结合强度。
PZT high-frequency ceramic surface metallization method
The invention relates to the technical field of ceramic metallization, in particular to a PZT high-frequency ceramic surface metallization method, which comprises the following steps: preparing PZT high-frequency ceramic; preparing a ternary transition metal boride transition layer on the surface of the PZT high-frequency ceramic; the ternary transition metal boride transition layer is located in a transition area from typical metal to typical ceramic, the performance of the ternary transition metal boride transition layer is between that of the typical metal and that of the typical ceramic, and a property gap between the metal and the ceramic is effectively bridged; the bonding between the PZT high-frequency ceramic and the metallization layer can be effectively promoted, the thermal stress caused near an interface due to the fact that the property difference of the two materials is too large is effectively relieved, and the bonding strength between the metallization layer and the PZT high-frequency ceramic is improved.
本发明涉及陶瓷金属化技术领域,具体为一种PZT高频陶瓷表面金属化方法,先制备PZT高频陶瓷;在所述PZT高频陶瓷表面制备三元过渡金属硼化物过渡层;最后在三元过渡金属硼化物过渡层表面制备金属化层即可,本申请中三元过渡金属硼化物过渡层处于典型金属向典型陶瓷的过渡区域,性能也介于两者之间,有效弥合了金属和陶瓷之间的性质鸿沟,可以有效地促进PZT高频陶瓷与金属化层间的结合,并有效缓和因两种材料性质差异过大在界面附近造成的热应力,提高金属化层与PZT高频陶瓷间的结合强度。
PZT high-frequency ceramic surface metallization method
一种PZT高频陶瓷表面金属化方法
FANG HAOJIE (Autor:in) / HE YIWEN (Autor:in) / ZHANG XIAOYUN (Autor:in) / ZHANG GUOXIU (Autor:in) / FANG MEILING (Autor:in) / LIU JIANPING (Autor:in) / ZENG XIONG (Autor:in)
07.01.2025
Patent
Elektronische Ressource
Chinesisch
IPC:
C04B
Kalk
,
LIME
Aluminum nitride ceramic surface metallization method
Europäisches Patentamt | 2022
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