Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Zinc oxide-based sputtering target material as well as preparation method and application thereof
The invention discloses a zinc oxide-based sputtering target material as well as a preparation method and application thereof, and belongs to the technical field of zinc oxide-based sputtering target materials. The preparation method comprises the following steps: smelting a magnesium ingot and a zinc ingot to obtain an alloy ingot; preparing the alloy ingot into magnesium oxide-doped zinc oxide powder by adopting a plasma gasification oxidation mode, and then preparing slurry from the zinc oxide powder, gallium oxide and rare earth oxide; and carrying out drying, compression molding, cold isostatic pressing and sintering on the slurry. Through smelting, sufficient solid solution of magnesium in zinc can be promoted, and the magnesium oxide doped zinc oxide powder with high solid solubility can be obtained. The doped magnesium oxide can regulate and control the forbidden bandwidth of zinc oxide, and better photoelectric properties of the film are obtained. By doping gallium oxide and rare earth oxide, n-type doping can be realized, weakly bound free electrons are introduced, the carrier mobility of zinc oxide is improved, and the resistivity of the material is reduced. The prepared zinc oxide-based target material is high in density, fine in crystal grain and uniform in organization structure, and the TCO thin film with excellent performance can be prepared easily.
本发明公开了一种氧化锌基溅射靶材及其制备方法与应用，属于氧化锌基溅射靶材技术领域。该制备方法包括：将镁锭和锌锭进行熔炼，得到合金锭；采用等离子气化氧化方式将合金锭制备成掺杂氧化镁的氧化锌粉末后与氧化镓及稀土氧化物制备成浆料；将浆料进行干燥、模压成型、冷等静压和烧结。通过熔炼，可促使镁在锌中的充分固溶，有利于获得高固溶度的氧化镁掺杂氧化锌粉末。掺杂氧化镁可以调控氧化锌的禁带宽度，获得更好的薄膜光电性能。掺杂氧化镓和稀土氧化物可实现n型掺杂，引入弱束缚的自由电子，提升氧化锌的载流子迁移率，并降低材料的电阻率。制备所得的氧化锌基靶材致密度高，晶粒细小且组织结构均匀，有利于制备性能优异的TCO薄膜。
Zinc oxide-based sputtering target material as well as preparation method and application thereof
The invention discloses a zinc oxide-based sputtering target material as well as a preparation method and application thereof, and belongs to the technical field of zinc oxide-based sputtering target materials. The preparation method comprises the following steps: smelting a magnesium ingot and a zinc ingot to obtain an alloy ingot; preparing the alloy ingot into magnesium oxide-doped zinc oxide powder by adopting a plasma gasification oxidation mode, and then preparing slurry from the zinc oxide powder, gallium oxide and rare earth oxide; and carrying out drying, compression molding, cold isostatic pressing and sintering on the slurry. Through smelting, sufficient solid solution of magnesium in zinc can be promoted, and the magnesium oxide doped zinc oxide powder with high solid solubility can be obtained. The doped magnesium oxide can regulate and control the forbidden bandwidth of zinc oxide, and better photoelectric properties of the film are obtained. By doping gallium oxide and rare earth oxide, n-type doping can be realized, weakly bound free electrons are introduced, the carrier mobility of zinc oxide is improved, and the resistivity of the material is reduced. The prepared zinc oxide-based target material is high in density, fine in crystal grain and uniform in organization structure, and the TCO thin film with excellent performance can be prepared easily.
本发明公开了一种氧化锌基溅射靶材及其制备方法与应用，属于氧化锌基溅射靶材技术领域。该制备方法包括：将镁锭和锌锭进行熔炼，得到合金锭；采用等离子气化氧化方式将合金锭制备成掺杂氧化镁的氧化锌粉末后与氧化镓及稀土氧化物制备成浆料；将浆料进行干燥、模压成型、冷等静压和烧结。通过熔炼，可促使镁在锌中的充分固溶，有利于获得高固溶度的氧化镁掺杂氧化锌粉末。掺杂氧化镁可以调控氧化锌的禁带宽度，获得更好的薄膜光电性能。掺杂氧化镓和稀土氧化物可实现n型掺杂，引入弱束缚的自由电子，提升氧化锌的载流子迁移率，并降低材料的电阻率。制备所得的氧化锌基靶材致密度高，晶粒细小且组织结构均匀，有利于制备性能优异的TCO薄膜。
Zinc oxide-based sputtering target material as well as preparation method and application thereof
一种氧化锌基溅射靶材及其制备方法与应用
FANG HONG (Autor:in) / FENG HAIQUAN (Autor:in) / LYU JIANGANG (Autor:in) / LI QI (Autor:in) / MENG XINYU (Autor:in)
14.01.2025
Patent
Elektronische Ressource
Chinesisch
Zinc-doped indium oxide powder, sputtering target material and preparation method thereof
| Europäisches Patentamt | 2022
Indium titanium zinc oxide sputtering target material, film thereof and preparation method thereof
| Europäisches Patentamt | 2023
| Europäisches Patentamt | 2023
Zinc-based oxide target material and preparation method and application thereof
| Europäisches Patentamt | 2025