Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON NITRIDE POWDER PRODUCTION METHOD, SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE USING SAME
An object of the present invention is to provide a silicon nitride sintered body having high mechanical strength and thermal conductivity, and a circuit substrate using the same. A method for producing a silicon nitride powder, including heating an amorphous Si-N(-H)-based compound in which assuming that the specific surface area is RS (m 2 /g) and the oxygen content ratio is RO (mass%), RS/RO is 500 or more, at a temperature rising rate of 12 to 100°C/min in a temperature range from 1,000 to 1,400°C while flowing the compound by a continuous firing furnace, is provided. Also, a silicon nitride powder wherein assuming that the content ratio of oxygen existing in a region from the particle surface to 3 nm beneath the particle surface is FSO (mass%), the content ratio of oxygen existing in the more inward side than 3 nm beneath the particle surface is FIO (mass%), and the specific surface area is FS (m 2 /g), FS/FSO is from 8 to 25 and FS/FIO is 22 or more; a silicon nitride sintered body obtained by sintering the silicon nitride powder; and a circuit substrate using the silicon nitride sintered body, are provided.
SILICON NITRIDE POWDER PRODUCTION METHOD, SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE USING SAME
An object of the present invention is to provide a silicon nitride sintered body having high mechanical strength and thermal conductivity, and a circuit substrate using the same. A method for producing a silicon nitride powder, including heating an amorphous Si-N(-H)-based compound in which assuming that the specific surface area is RS (m 2 /g) and the oxygen content ratio is RO (mass%), RS/RO is 500 or more, at a temperature rising rate of 12 to 100°C/min in a temperature range from 1,000 to 1,400°C while flowing the compound by a continuous firing furnace, is provided. Also, a silicon nitride powder wherein assuming that the content ratio of oxygen existing in a region from the particle surface to 3 nm beneath the particle surface is FSO (mass%), the content ratio of oxygen existing in the more inward side than 3 nm beneath the particle surface is FIO (mass%), and the specific surface area is FS (m 2 /g), FS/FSO is from 8 to 25 and FS/FIO is 22 or more; a silicon nitride sintered body obtained by sintering the silicon nitride powder; and a circuit substrate using the silicon nitride sintered body, are provided.
SILICON NITRIDE POWDER PRODUCTION METHOD, SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE USING SAME
HERSTELLUNGSVERFAHREN FÜR SILICIUMNITRIDPULVER, SILIZIUMNITRIDPULVER, SILICIUMNITRID-SINTERKÖRPER UND SCHALTUNGSSUBSTRAT DAMIT
PROCÉDÉ DE PRODUCTION DE POUDRE DE NITRURE DE SILICIUM, POUDRE DE NITRURE DE SILICIUM, CORPS FRITTÉ DE NITRURE DE SILICIUM ET SUBSTRAT DE CIRCUIT L'UTILISANT
SHIBATA KOJI (Autor:in) / OHMARU TAKUJI (Autor:in) / YAMAO TAKESHI (Autor:in) / FUJINAGA MASATAKA (Autor:in) / HONDA MICHIO (Autor:in) / FUJII TAKAYUKI (Autor:in)
14.11.2018
Patent
Elektronische Ressource
Englisch
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