Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON CARBIDE MEMBER FOR PLASMA TREATMENT DEVICES, AND METHOD FOR MANUFACTURING SAME
It is an object of the present invention to provide a low cost and durable silicon carbide member for a plasma processing apparatus. A silicon carbide member for a plasma processing apparatus of the present invention is obtained by mixing an ±-silicon carbide powder having an average particle size of 0.3 to 3 µm, wherein an amount of metal impurities in the ±-silicon carbide powder is reduced to 20 ppm or less, and a sintering aid comprising B 4 C in amount of 0.5 to 5 weight parts or Al 2 O 3 and Y 2 O 3 in total amount of 3 to 15 weight parts; sintering a mixture of the ±-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body.
SILICON CARBIDE MEMBER FOR PLASMA TREATMENT DEVICES, AND METHOD FOR MANUFACTURING SAME
It is an object of the present invention to provide a low cost and durable silicon carbide member for a plasma processing apparatus. A silicon carbide member for a plasma processing apparatus of the present invention is obtained by mixing an ±-silicon carbide powder having an average particle size of 0.3 to 3 µm, wherein an amount of metal impurities in the ±-silicon carbide powder is reduced to 20 ppm or less, and a sintering aid comprising B 4 C in amount of 0.5 to 5 weight parts or Al 2 O 3 and Y 2 O 3 in total amount of 3 to 15 weight parts; sintering a mixture of the ±-silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body.
SILICON CARBIDE MEMBER FOR PLASMA TREATMENT DEVICES, AND METHOD FOR MANUFACTURING SAME
SILICIUMCARBIDELEMENT FÜR PLASMAVERARBEITUNGSGERÄTE UND VERFAHREN ZUR HERSTELLUNG DAVON
ÉLÉMENT EN CARBURE DE SILICIUM POUR APPAREILS DE TRAITEMENT PAR PLASMA, ET SON PROCÉDÉ DE FABRICATION
OKESAKU MASAHIRO (Autor:in) / MIYAHARA MICHITO (Autor:in) / ETO HIDEO (Autor:in) / OKUDO YUKIO (Autor:in) / SAITO MAKOTO (Autor:in) / SANDA HIROSHI (Autor:in)
04.05.2022
Patent
Elektronische Ressource
Englisch
SILICON CARBIDE MEMBER FOR PLASMA TREATMENT DEVICES, AND METHOD FOR MANUFACTURING SAME
| Europäisches Patentamt | 2016
SILICON CARBIDE MEMBER FOR PLASMA TREATMENT APPARATUS, AND METHOD OF MANUFACTURING SAME
| Europäisches Patentamt | 2018
| Europäisches Patentamt | 2015
METHOD FOR MANUFACTURING REACTION SINTERED SILICON CARBIDE MEMBER
| Europäisches Patentamt | 2016