Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
MANUFACTURING METHOD OF SILICON CARBIDE MEMBER
To provide a manufacturing method of a silicon carbide member for a semiconductor manufacturing apparatus capable of removing a carbon component on an inner surface of a hollow flow path inside the silicon carbide member.SOLUTION: The manufacturing method of a silicon carbide member 11 for a semiconductor manufacturing apparatus comprises at least one of the following steps of: preparing silicon carbide members 11a to 11c in which a hollow flow path is formed by a silicon carbide sintered body; flowing polishing liquid through the hollow flow path to process its inner surface; and subjecting the silicon carbide member 11 to heat treatment while flowing an oxygen-containing gas in the hollow flow path. The preparing step of the silicon carbide member 11 having the inner hollow flow path includes preparing a plurality of silicon carbide sintered bodies having recesses or through holes for the hollow flow path, and joining the plurality of silicon carbide sintered bodies together to form the hollow flow path.SELECTED DRAWING: Figure 2
【課題】炭化珪素部材内部の中空流路の内面にある炭素成分を除去できる半導体製造装置のための炭化珪素部材の製造方法を提供する。【解決手段】炭化珪素焼結体によって内部に中空流路が画定された炭化珪素部材１１ａ〜ｃを準備する工程と、該中空流路に研磨液を流通させ、その内面を加工する工程と、該中空流路に酸素含有ガスを流しつつ炭化珪素部材１１に対して熱処理を施す工程と、の少なくとも１つの工程を含み、内部に該中空流路が画定された炭化珪素部材１１を準備する工程は、該中空流路溶の凹部又は貫通孔を有する複数の炭化珪素焼結体を準備し、該複数の炭化珪素焼結体を互いに接合し、該中空流路を画定する工程を含む、半導体製造装置のための炭化珪素部材１１の製造方法。【選択図】図２
MANUFACTURING METHOD OF SILICON CARBIDE MEMBER
To provide a manufacturing method of a silicon carbide member for a semiconductor manufacturing apparatus capable of removing a carbon component on an inner surface of a hollow flow path inside the silicon carbide member.SOLUTION: The manufacturing method of a silicon carbide member 11 for a semiconductor manufacturing apparatus comprises at least one of the following steps of: preparing silicon carbide members 11a to 11c in which a hollow flow path is formed by a silicon carbide sintered body; flowing polishing liquid through the hollow flow path to process its inner surface; and subjecting the silicon carbide member 11 to heat treatment while flowing an oxygen-containing gas in the hollow flow path. The preparing step of the silicon carbide member 11 having the inner hollow flow path includes preparing a plurality of silicon carbide sintered bodies having recesses or through holes for the hollow flow path, and joining the plurality of silicon carbide sintered bodies together to form the hollow flow path.SELECTED DRAWING: Figure 2
【課題】炭化珪素部材内部の中空流路の内面にある炭素成分を除去できる半導体製造装置のための炭化珪素部材の製造方法を提供する。【解決手段】炭化珪素焼結体によって内部に中空流路が画定された炭化珪素部材１１ａ〜ｃを準備する工程と、該中空流路に研磨液を流通させ、その内面を加工する工程と、該中空流路に酸素含有ガスを流しつつ炭化珪素部材１１に対して熱処理を施す工程と、の少なくとも１つの工程を含み、内部に該中空流路が画定された炭化珪素部材１１を準備する工程は、該中空流路溶の凹部又は貫通孔を有する複数の炭化珪素焼結体を準備し、該複数の炭化珪素焼結体を互いに接合し、該中空流路を画定する工程を含む、半導体製造装置のための炭化珪素部材１１の製造方法。【選択図】図２
MANUFACTURING METHOD OF SILICON CARBIDE MEMBER
炭化珪素部材の製造方法
SATO RYOTA (Autor:in)
07.02.2019
Patent
Elektronische Ressource
Japanisch
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