Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SIC CRUCIBLE, METHOD OF MAKING THE CRUCIBLE AND METHOD OF PRODUCING SIC SINGLE CRYSTAL
In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si-C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si-C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si-C solution by heating.
SIC CRUCIBLE, METHOD OF MAKING THE CRUCIBLE AND METHOD OF PRODUCING SIC SINGLE CRYSTAL
In the present invention, in producing a SiC single crystal in accordance with a solution method, a crucible containing SiC as a main component and having an oxygen content of 100 ppm or less is used as the crucible to be used as a container for a Si-C solution. In another embodiment, a sintered body containing SiC as a main component and having an oxygen content of 100 ppm or less is placed in the crucible to be used as a container for a Si-C solution. The SiC crucible and SiC sintered body are obtained by molding and baking a SiC raw-material powder having an oxygen content of 2000 ppm or less. SiC, which is the main component of these, serves as a source for Si and C and allows Si and C to elute into the Si-C solution by heating.
SIC CRUCIBLE, METHOD OF MAKING THE CRUCIBLE AND METHOD OF PRODUCING SIC SINGLE CRYSTAL
SIC-TIEGEL, VERFAHREN ZUR HERSTELLUNG DER TIEGEL UND VERFAHREN ZUR HERSTELLUNG EINES SIC-EINKRISTALLS
CREUSET EN SIC, PROCÉDÉ DE PRÉPARATION DU CREUSET ET PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL DE SIC
SHINYA NAOFUMI (Autor:in) / HAMAGUCHI YU (Autor:in) / YAMAGATA NORIO (Autor:in) / YAMADA OSAMU (Autor:in) / MINOWA TAKEHISA (Autor:in)
06.10.2021
Patent
Elektronische Ressource
Englisch
CRUCIBLE, METHOD FOR PRODUCING CRUCIBLE, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL
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