Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SILICON NITRIDE SINTERED SUBSTRATE, SILICON NITRIDE SINTERED SUBSTRATE SHEET, CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SILICON NITRIDE SINTERED SUBSTRATE
Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm 3 or higher, the density de of the end area is 3.160 g/cm 3 or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.
SILICON NITRIDE SINTERED SUBSTRATE, SILICON NITRIDE SINTERED SUBSTRATE SHEET, CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SILICON NITRIDE SINTERED SUBSTRATE
Provided is a large-sized silicon nitride sintered substrate and a method for producing the same. The silicon nitride sintered substrate has a main surface 101a of a shape larger than a square having a side of a length of 120 mm. A ratio dc/de of the density dc of the central area and the density de of the end area of the main surface 101a is 0.98 or higher. The void fraction vc of the central area of the main surface 101a is 1.80% or lower, and the void fraction ve of the end area is 1.00% or lower. It is preferred that the density dc of the central area is 3.120 g/cm 3 or higher, the density de of the end area is 3.160 g/cm 3 or higher, and a ratio ve/vc of the void fraction vc of the central area and the void fraction ve of the end area is 0.50 or higher.
SILICON NITRIDE SINTERED SUBSTRATE, SILICON NITRIDE SINTERED SUBSTRATE SHEET, CIRCUIT SUBSTRATE, AND PRODUCTION METHOD FOR SILICON NITRIDE SINTERED SUBSTRATE
GESINTERTES SILICIUMNITRIDSUBSTRAT, GESINTERTE SILICIUMNITRIDSUBSTRATSCHICHT, SCHALTUNGSSUBSTRAT UND HERSTELLUNGSVERFAHREN FÜR GESINTERTES SILICIUMNITRIDSUBSTRAT
SUBSTRAT FRITTÉ EN NITRURE DE SILICIUM, FEUILLE DE SUBSTRAT FRITTÉ EN NITRURE DE SILICIUM, SUBSTRAT DE CIRCUIT ET PROCÉDÉ DE PRODUCTION DE SUBSTRAT FRITTÉ EN NITRURE DE SILICIUM
IMAMURA HISAYUKI (Autor:in) / FUJITA SUGURU (Autor:in) / KAGA YOUICHIROU (Autor:in) / TESHIMA HIROYUKI (Autor:in) / HAMAYOSHI SHIGEYUKI (Autor:in)
04.03.2020
Patent
Elektronische Ressource
Englisch
| Europäisches Patentamt | 2020
| Europäisches Patentamt | 2017
| Europäisches Patentamt | 2019
SILICON NITRIDE SINTERED BODY, SILICON NITRIDE SUBSTRATE, AND SILICON NITRIDE CIRCUIT SUBSTRATE
| Europäisches Patentamt | 2020