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TUNGSTEN OXIDE SPUTTERING TARGET
A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.38 or less, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.55 or more, and an area ratio of W18O49 phase of a surface parallel to the sputtering surface is 37% or more.
TUNGSTEN OXIDE SPUTTERING TARGET
A W18O49 peak is confirmed by X-ray diffraction analysis of a sputtering surface and a cross section orthogonal to the sputtering surface, a ratio IS(103)/IS(010) of a diffraction intensity IS(103) of a (103) plane to a diffraction intensity IS(010) of a (010) plane of W18O49 of the sputtering surface is 0.38 or less, a ratio IC(103)/IC(010) of a diffraction intensity IC(103) of the (103) plane to a diffraction intensity IC(010) of the (010) plane of W18O49 of the cross section is 0.55 or more, and an area ratio of W18O49 phase of a surface parallel to the sputtering surface is 37% or more.
TUNGSTEN OXIDE SPUTTERING TARGET
SPUTTERTARGET AUS WOLFRAMOXID
CIBLE DE PULVÉRISATION D'OXYDE DE TUNGSTÈNE
YAMAGUCHI GO (Autor:in) / IO KENSUKE (Autor:in) / KAWAMURA SHIORI (Autor:in) / UMEMOTO KEITA (Autor:in)
16.11.2022
Patent
Elektronische Ressource
Englisch