Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
TUNGSTEN OXIDE SPUTTERING TARGET
This tungsten oxide sputtering target is characterized in that a peak of W18O49 is identified by X-ray diffraction analysis on a sputter surface and a cross section perpendicular to the sputter surface, wherein IS(103)/IS(010), which is the ratio of diffraction intensity IS(103) of (103) plane to diffraction intensity IS(010) of (010) plane for W18O49 on the sputter surface, is 0.38 or less, IC(103)/IC(010), which is the ratio of diffraction intensity IC(103) of (103) plane to diffraction intensity IC(010) of (010) plane for W18O49 on the cross section is at least 0.55, and the area ratio of W18O49 phase on a surface parallel to the sputter surface is at least 37%.
本发明提供一种氧化钨溅射靶，其特征在于，通过溅射面及与所述溅射面正交的截面的X射线衍射分析，确认到W18O49的峰，并且所述溅射面的W18O49的(103)面的衍射强度IS(103)与(010)面的衍射强度IS(010)之比IS(103)/IS(010)为0.38以下，所述截面的W18O49的(103)面的衍射强度IC(103)与(010)面的衍射强度IC(010)之比IC(103)/IC(010)为0.55以上，与溅射面平行的面的所述W18O49相的面积率为37％以上。
TUNGSTEN OXIDE SPUTTERING TARGET
This tungsten oxide sputtering target is characterized in that a peak of W18O49 is identified by X-ray diffraction analysis on a sputter surface and a cross section perpendicular to the sputter surface, wherein IS(103)/IS(010), which is the ratio of diffraction intensity IS(103) of (103) plane to diffraction intensity IS(010) of (010) plane for W18O49 on the sputter surface, is 0.38 or less, IC(103)/IC(010), which is the ratio of diffraction intensity IC(103) of (103) plane to diffraction intensity IC(010) of (010) plane for W18O49 on the cross section is at least 0.55, and the area ratio of W18O49 phase on a surface parallel to the sputter surface is at least 37%.
本发明提供一种氧化钨溅射靶，其特征在于，通过溅射面及与所述溅射面正交的截面的X射线衍射分析，确认到W18O49的峰，并且所述溅射面的W18O49的(103)面的衍射强度IS(103)与(010)面的衍射强度IS(010)之比IS(103)/IS(010)为0.38以下，所述截面的W18O49的(103)面的衍射强度IC(103)与(010)面的衍射强度IC(010)之比IC(103)/IC(010)为0.55以上，与溅射面平行的面的所述W18O49相的面积率为37％以上。
TUNGSTEN OXIDE SPUTTERING TARGET
氧化钨溅射靶
YAMAGUCHI TAKESHI (Autor:in) / IO KENSUKE (Autor:in) / KAWAMURA SHIORI (Autor:in) / UMEMOTO KEITA (Autor:in)
15.10.2021
Patent
Elektronische Ressource
Chinesisch