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    GALLIUM NITRIDE PARTICLES AND METHOD FOR PRODUCING SAME

    Neue Suche nach: MESUDA MASAMI
    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: HARA SHINICHI

    High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at% or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

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    GALLIUM NITRIDE PARTICLES AND METHOD FOR PRODUCING SAME

    Neue Suche nach: MESUDA MASAMI
    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: HARA SHINICHI

    High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at% or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

    Zugriff

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    GALLIUM NITRIDE PARTICLES AND METHOD FOR PRODUCING SAME

    Neue Suche nach: MESUDA MASAMI
    Neue Suche nach: KURAMOCHI HIDETO
    Neue Suche nach: HARA SHINICHI

    High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at% or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

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    Titel:

    GALLIUM NITRIDE PARTICLES AND METHOD FOR PRODUCING SAME

    Weitere Titelangaben:

    GALLIUMNITRIDPARTIKEL UND HERSTELLUNGSVERFAHREN DAFÜR
    PARTICULES DE NITRURE DE GALLIUM ET LEUR MÉTHODE DE PRODUCTION

    Beteiligte:

    MESUDA MASAMI (Autor:in) / KURAMOCHI HIDETO (Autor:in) / HARA SHINICHI (Autor:in)

    Erscheinungsdatum:

    10.01.2024

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Englisch

    Klassifikation:

    IPC:  C01B NON-METALLIC ELEMENTS , Nichtmetallische Elemente / C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES

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