Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
VERFAHREN ZUM ABTRENNEN VON VERUNREINIGUNGEN VON SILICIUMCARBID UND TEMPERATURBEHANDELTES UND GEREINIGTES SILICIUMCARBID-PULVER
The invention concerns the area of ceramics an relates to a method for separating impurities from silicon carbide, said method being applicable to SiC powders from grinding sludges, and to temperature-treated and purified silicon carbide powder. The aim of the invention is to provide a method with which different impurities are substantially completely removed using a simple and economical process. This is achieved by a method in which pulverulent SiC waste products that have a mass percent of SiC of at least 50% and an average grain size d50 ranging from 0.5 to 1000 μm and have been subjected to a temperature treatment and cooled are mechanically treated and physically separated. The physically separated SiC powder is then divided into two fractions, one of which has a mass of impurities that is greater than the mass of impurities in the other fraction at least by a factor of 2.
VERFAHREN ZUM ABTRENNEN VON VERUNREINIGUNGEN VON SILICIUMCARBID UND TEMPERATURBEHANDELTES UND GEREINIGTES SILICIUMCARBID-PULVER
The invention concerns the area of ceramics an relates to a method for separating impurities from silicon carbide, said method being applicable to SiC powders from grinding sludges, and to temperature-treated and purified silicon carbide powder. The aim of the invention is to provide a method with which different impurities are substantially completely removed using a simple and economical process. This is achieved by a method in which pulverulent SiC waste products that have a mass percent of SiC of at least 50% and an average grain size d50 ranging from 0.5 to 1000 μm and have been subjected to a temperature treatment and cooled are mechanically treated and physically separated. The physically separated SiC powder is then divided into two fractions, one of which has a mass of impurities that is greater than the mass of impurities in the other fraction at least by a factor of 2.
VERFAHREN ZUM ABTRENNEN VON VERUNREINIGUNGEN VON SILICIUMCARBID UND TEMPERATURBEHANDELTES UND GEREINIGTES SILICIUMCARBID-PULVER
METHOD FOR SEPARATING IMPURITIES FROM SILICON CARBIDE, AND TEMPERATURE-TREATED AND PURIFIED SILICON CARBIDE POWDER
PROCÉDÉ DE SÉPARATION D'IMPURETÉS À PARTIR DE CARBURE DE SILICIUM, ET POUDRE DE CARBURE DE SILICIUM TRAITÉE PAR VOIE THERMIQUE ET PURIFIÉE
ADLER JÖRG (Autor:in) / HEYMER HEIKE (Autor:in) / HAUSMANN MATTHIAS (Autor:in) / KLIETZ WENZEL (Autor:in) / RÄTHEL JAN (Autor:in) / GARBES JOSEF (Autor:in)
07.12.2022
Patent
Elektronische Ressource
Deutsch
Europäisches Patentamt | 2021
|Verfahren zum Herstellen eines Siliciumcarbid-Sinterkörpers
Europäisches Patentamt | 2018
|Verfahren zur Herstellung einer Siliciumcarbid enthaltenden Wabenstruktur
Europäisches Patentamt | 2025
|VERFAHREN ZUR HERSTELLUNG EINES SILICIUMCARBID-FORMKÖRPERS
Europäisches Patentamt | 2017
|VERFAHREN ZUR ERZEUGUNG VON SCHICHTEN AUS SILICIUMCARBID
Europäisches Patentamt | 2018
|