Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED BODY, OXIDE SPUTTERING TARGET AND CONDUCTIVE OXIDE THIN MEMBRANE AND MANUFACTURING METHOD OF OXIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide an oxide sintered sputtering target high in relative density and low in volume resistivity, capable of DC sputtering and suitable for forming an amorphous conductive oxide thin membrane with high transmittance and high refractive index.SOLUTION: There is provided an oxide sintered body consisting of indium (In), titanium (Ti), zinc (Zn), tin (Sn) and oxygen (O) and having the content of In to Ti satisfying, by atom number ratio, 3.0≤In/Ti≤5.0, the content of Zn and Sn to In and Ti satisfying, by atom number ratio, 0.2≤(Zn+Sn)/(In+Ti)≤1.5 and the content of Zn to Sn satisfying, by atom number ratio, 0.5≤Zn/Sn≤7.0. There is provided a composite oxide membrane having relative density of 90% or more, volume resistivity of 10 Ωcm or less, refractive index at a wavelength of 550 nm of 2.05 or more and extinction coefficient at the wavelength of 405 nm of 0.05 or less.SELECTED DRAWING: Figure 1
【課題】相対密度が高く体積抵抗率が低く、ＤＣスパッタリングが可能であり、高透過率かつ高屈折率でアモルファスの導電性酸化物薄膜を形成するのに適した酸化物焼結体スパッタリングターゲットの提供。【解決手段】インジウム（Ｉｎ）、チタン（Ｔｉ）、亜鉛（Ｚｎ）、錫（Ｓｎ）、及び、酸素（Ｏ）からなり、Ｔｉに対するＩｎの含有量が原子数比で３．０≦Ｉｎ／Ｔｉ≦５．０、ＩｎとＴｉに対するＺｎとＳｎの含有量が原子数比で０．２≦（Ｚｎ＋Ｓｎ）／（Ｉｎ＋Ｔｉ）≦１．５、Ｓｎに対するＺｎの含有量が原子数比で０．５≦Ｚｎ／Ｓｎ≦７．０、の関係式を満たす酸化物焼結体。相対密度が９０％以上であり、体積抵抗率が１０Ωｃｍ以下であり、波長５５０ｎｍにおける屈折率が２．０５以上であり、波長４０５ｎｍにおける消衰係数が０．０５以下である複合酸化物膜。【選択図】図１
OXIDE SINTERED BODY, OXIDE SPUTTERING TARGET AND CONDUCTIVE OXIDE THIN MEMBRANE AND MANUFACTURING METHOD OF OXIDE SINTERED BODY
PROBLEM TO BE SOLVED: To provide an oxide sintered sputtering target high in relative density and low in volume resistivity, capable of DC sputtering and suitable for forming an amorphous conductive oxide thin membrane with high transmittance and high refractive index.SOLUTION: There is provided an oxide sintered body consisting of indium (In), titanium (Ti), zinc (Zn), tin (Sn) and oxygen (O) and having the content of In to Ti satisfying, by atom number ratio, 3.0≤In/Ti≤5.0, the content of Zn and Sn to In and Ti satisfying, by atom number ratio, 0.2≤(Zn+Sn)/(In+Ti)≤1.5 and the content of Zn to Sn satisfying, by atom number ratio, 0.5≤Zn/Sn≤7.0. There is provided a composite oxide membrane having relative density of 90% or more, volume resistivity of 10 Ωcm or less, refractive index at a wavelength of 550 nm of 2.05 or more and extinction coefficient at the wavelength of 405 nm of 0.05 or less.SELECTED DRAWING: Figure 1
【課題】相対密度が高く体積抵抗率が低く、ＤＣスパッタリングが可能であり、高透過率かつ高屈折率でアモルファスの導電性酸化物薄膜を形成するのに適した酸化物焼結体スパッタリングターゲットの提供。【解決手段】インジウム（Ｉｎ）、チタン（Ｔｉ）、亜鉛（Ｚｎ）、錫（Ｓｎ）、及び、酸素（Ｏ）からなり、Ｔｉに対するＩｎの含有量が原子数比で３．０≦Ｉｎ／Ｔｉ≦５．０、ＩｎとＴｉに対するＺｎとＳｎの含有量が原子数比で０．２≦（Ｚｎ＋Ｓｎ）／（Ｉｎ＋Ｔｉ）≦１．５、Ｓｎに対するＺｎの含有量が原子数比で０．５≦Ｚｎ／Ｓｎ≦７．０、の関係式を満たす酸化物焼結体。相対密度が９０％以上であり、体積抵抗率が１０Ωｃｍ以下であり、波長５５０ｎｍにおける屈折率が２．０５以上であり、波長４０５ｎｍにおける消衰係数が０．０５以下である複合酸化物膜。【選択図】図１
OXIDE SINTERED BODY, OXIDE SPUTTERING TARGET AND CONDUCTIVE OXIDE THIN MEMBRANE AND MANUFACTURING METHOD OF OXIDE SINTERED BODY
酸化物焼結体、酸化物スパッタリングターゲット及び導電性酸化物薄膜並びに酸化物焼結体の製造方法
NARA ATSUSHI (Autor:in)
12.05.2016
Patent
Elektronische Ressource
Japanisch
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