Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD, AND INKJET PRINTER DEVICE
To provide a piezoelectric thin film excellent in piezoelectric characteristics and ferroelectricity.SOLUTION: A piezoelectric thin film 3 is a piezoelectric thin film 3 including an oxide having a perovskite structure. The perovskite structure belongs to a tetragonal system. The oxide is represented by the following chemical formula 1. A (001) plane of the perovskite structure is oriented in a normal direction dn of a surface of the piezoelectric thin film 3. (1-x)(BiNa)TiO-xBaTiO(1) [In the above chemical formula 1, x satisfies 0.25≤x≤0.70.]SELECTED DRAWING: Figure 1
【課題】圧電特性及び強誘電性に優れた圧電薄膜を提供すること。【解決手段】圧電薄膜３は、ペロブスカイト構造を有する酸化物を含む圧電薄膜３であって、ペロブスカイト構造が正方晶系に属し、酸化物が下記化学式１で表され、ペロブスカイト構造の（００１）面が、圧電薄膜３の表面の法線方向ｄｎにおいて配向している。（１−ｘ）（Ｂｉ０．５Ｎａ０．５）ＴｉＯ３‐ｘＢａＴｉＯ３（１）［上記化学式１中、ｘは０．２５≦ｘ≦０．７０を満たす。］【選択図】図１
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD, AND INKJET PRINTER DEVICE
To provide a piezoelectric thin film excellent in piezoelectric characteristics and ferroelectricity.SOLUTION: A piezoelectric thin film 3 is a piezoelectric thin film 3 including an oxide having a perovskite structure. The perovskite structure belongs to a tetragonal system. The oxide is represented by the following chemical formula 1. A (001) plane of the perovskite structure is oriented in a normal direction dn of a surface of the piezoelectric thin film 3. (1-x)(BiNa)TiO-xBaTiO(1) [In the above chemical formula 1, x satisfies 0.25≤x≤0.70.]SELECTED DRAWING: Figure 1
【課題】圧電特性及び強誘電性に優れた圧電薄膜を提供すること。【解決手段】圧電薄膜３は、ペロブスカイト構造を有する酸化物を含む圧電薄膜３であって、ペロブスカイト構造が正方晶系に属し、酸化物が下記化学式１で表され、ペロブスカイト構造の（００１）面が、圧電薄膜３の表面の法線方向ｄｎにおいて配向している。（１−ｘ）（Ｂｉ０．５Ｎａ０．５）ＴｉＯ３‐ｘＢａＴｉＯ３（１）［上記化学式１中、ｘは０．２５≦ｘ≦０．７０を満たす。］【選択図】図１
PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD, AND INKJET PRINTER DEVICE
圧電薄膜、圧電薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置
SATO YUSUKE (Autor:in) / SATO WAKIKO (Autor:in) / ISHIDA MIRAI (Autor:in) / FUNAKUBO HIROSHI (Autor:in) / HASEGAWA MIYU (Autor:in) / SHIMIZU TAKAO (Autor:in)
22.07.2019
Patent
Elektronische Ressource
Japanisch
IPC:
H10N
/
B41J
TYPEWRITERS
,
Schreibmaschinen
/
C04B
Kalk
,
LIME
/
C23C
Beschichten metallischer Werkstoffe
,
COATING METALLIC MATERIAL
/
G11B
Informationsspeicherung mit Relativbewegung zwischen Aufzeichnungsträger und Wandler
,
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
/
H02N
Elektrische Maschinen, soweit nicht anderweitig vorgesehen
,
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
| Europäisches Patentamt | 2020
| Europäisches Patentamt | 2022