Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR
To provide a TFT that exhibits excellent TFT performance, an oxide semiconductor film that can be used for the TFT, a sputtering target that can form the oxide semiconductor film, and an oxide sintered body as a material thereof.SOLUTION: An oxide sintered body which comprises an oxide containing an In element, a Zn element, a Sn element and a Y element, and in which a bixbyite phase represented by In2O3 is a main component.SELECTED DRAWING: Figure 1
【課題】優れたＴＦＴ性能を発揮するＴＦＴ、当該ＴＦＴに用いることのできる酸化物半導体膜、当該酸化物半導体膜を形成できるスパッタリングターゲット、及びその材料である酸化物焼結体を提供する。【解決手段】Ｉｎ元素、Ｚｎ元素、Ｓｎ元素及びＹ元素を含む酸化物を含み、Ｉｎ２Ｏ３で表されるビックスバイト相が主成分であることを特徴とする酸化物焼結体。【選択図】図１
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR
To provide a TFT that exhibits excellent TFT performance, an oxide semiconductor film that can be used for the TFT, a sputtering target that can form the oxide semiconductor film, and an oxide sintered body as a material thereof.SOLUTION: An oxide sintered body which comprises an oxide containing an In element, a Zn element, a Sn element and a Y element, and in which a bixbyite phase represented by In2O3 is a main component.SELECTED DRAWING: Figure 1
【課題】優れたＴＦＴ性能を発揮するＴＦＴ、当該ＴＦＴに用いることのできる酸化物半導体膜、当該酸化物半導体膜を形成できるスパッタリングターゲット、及びその材料である酸化物焼結体を提供する。【解決手段】Ｉｎ元素、Ｚｎ元素、Ｓｎ元素及びＹ元素を含む酸化物を含み、Ｉｎ２Ｏ３で表されるビックスバイト相が主成分であることを特徴とする酸化物焼結体。【選択図】図１
OXIDE SINTERED BODY, SPUTTERING TARGET, OXIDE SEMICONDUCTOR FILM AND THIN FILM TRANSISTOR
酸化物焼結体、スパッタリングターゲット、酸化物半導体膜及び薄膜トランジスタ
INOUE KAZUYOSHI (Autor:in) / UTSUNO FUTOSHI (Autor:in) / TOMAI SHIGEKAZU (Autor:in) / SHIBATA MASATOSHI (Autor:in) / ITOSE ASAMI (Autor:in)
11.03.2021
Patent
Elektronische Ressource
Japanisch
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY, AND SPUTTERING TARGET
| Europäisches Patentamt | 2019
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
| Europäisches Patentamt | 2018
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY, AND SPUTTERING TARGET
| Europäisches Patentamt | 2018
OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, OXIDE SINTERED BODY AND SPUTTERING TARGET
| Europäisches Patentamt | 2019
Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target
| Europäisches Patentamt | 2023