Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE, HOLDING DEVICE, AND METHOD OF MANUFACTURING COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE
To suppress increase of unevenness of a surface of a component for semiconductor manufacturing device that has high corrosion resistance by suppressing generation of a particle source due to corrosion resulting from exposure to plasma etc.SOLUTION: A component for semiconductor manufacturing device comprises a ceramic part which consists principally of Al2O3, and includes a 0.01-0.1 mol% of a Gd element in terms of Gd2O3, in which crystal phase, detected by an X-ray diffraction method, of a surface of the ceramic part consists of a single phase having an α-Al2O3 (corundum) structure.SELECTED DRAWING: Figure 4
【課題】高耐食性を有し、プラズマなどにさらされた場合の浸食によって生じるパーティクル源の発生を抑制し、半導体製造装置用部品の表面の凹凸の増大を抑制する。【解決手段】Ａｌ2Ｏ3を主成分とし、Ｇｄ2Ｏ3換算で０．０１ｍｏｌ％以上０．１ｍｏｌ％以下のＧｄ元素を含むセラミックス部を備える半導体製造装置用部品は、セラミックス部の表面のＸ線回折法により検出される結晶相が、α−Ａｌ2Ｏ3（コランダム）構造の単相からなる。【選択図】図４
COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE, HOLDING DEVICE, AND METHOD OF MANUFACTURING COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE
To suppress increase of unevenness of a surface of a component for semiconductor manufacturing device that has high corrosion resistance by suppressing generation of a particle source due to corrosion resulting from exposure to plasma etc.SOLUTION: A component for semiconductor manufacturing device comprises a ceramic part which consists principally of Al2O3, and includes a 0.01-0.1 mol% of a Gd element in terms of Gd2O3, in which crystal phase, detected by an X-ray diffraction method, of a surface of the ceramic part consists of a single phase having an α-Al2O3 (corundum) structure.SELECTED DRAWING: Figure 4
【課題】高耐食性を有し、プラズマなどにさらされた場合の浸食によって生じるパーティクル源の発生を抑制し、半導体製造装置用部品の表面の凹凸の増大を抑制する。【解決手段】Ａｌ2Ｏ3を主成分とし、Ｇｄ2Ｏ3換算で０．０１ｍｏｌ％以上０．１ｍｏｌ％以下のＧｄ元素を含むセラミックス部を備える半導体製造装置用部品は、セラミックス部の表面のＸ線回折法により検出される結晶相が、α−Ａｌ2Ｏ3（コランダム）構造の単相からなる。【選択図】図４
COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE, HOLDING DEVICE, AND METHOD OF MANUFACTURING COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE
半導体製造装置用部品、保持装置、および半導体製造装置用部品の製造方法
ITO YOICHI (Autor:in) / HOTTA GENKI (Autor:in) / OGAWA TAKAMICHI (Autor:in)
17.06.2021
Patent
Elektronische Ressource
Japanisch
METHOD FOR MANUFACTURING SEMICONDUCTOR MANUFACTURING DEVICE COMPONENT
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