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Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
SEMICONDUCTOR ELECTROTHERMAL FILM PRECURSOR SOLUTION, SEMICONDUCTOR ELECTROTHERMAL FILM STRUCTURE, AND METHOD FOR MANUFACTURING ELECTROTHERMAL STRUCTURE
To provide a semiconductor electrothermal film structure with the characteristics of rapid temperature change resistance, breakdown resistance, a change in a wide range of adaptable voltage, high electrothermal conversion efficiency, and high temperature resistance.SOLUTION: A semiconductor electrothermal film precursor solution includes a composition A, a composition B, and a composition C, the composition A is 2 weight% tin (IV) chloride pentahydrate, 3 weight% stannous chloride, and 0.3 weight% glycerin, and further includes a PH adjuster to adjust the pH of composition A to 4.7 to 6.2, the PH adjuster of the composition A is glacial acetic acid. The composition B contains 5 weight% of the conductance modifier antimony (III) chloride dihydrate and 0.6 weight% of aluminum chloride, and a PH modifier that adjusts the PH of the composition B to between 4.7 and 5.0. and the pH adjuster of the composition B is hydrochloric acid. The composition C contains 0.5 weight% tin oxide, 0.8 weight% bismuth oxide, and 15 weight% ethanol.SELECTED DRAWING: None
【課題】電熱構造は耐温度急変、耐破壊、適応電圧の広い範囲の変化、電熱変換効率が高く、耐高温性が良い性質を有する半導体電熱膜構造を提供する。【解決手段】半導体電熱膜の前駆体溶液は、組成Ａ、組成Ｂおよび組成Ｃを含み、組成Ａは、２重量％の塩化スズ（ＩＶ）５水和物、３重量％の塩化第一スズ、および０．３重量％のグリセリンを含有し、さらに組成ＡのＰＨを４．７～６．２に調節するＰＨ調節剤を含み、組成ＡのＰＨ調節剤は氷酢酸とする。組成Ｂは、５重量％のコンダクタンス調節剤である塩化アンチモン（ＩＩＩ）２水和物、および０．６重量％の塩化アルミニウムを含有し、さらに組成ＢのＰＨを４．７～５．０に調節するＰＨ調節剤を含み、組成ＢのＰＨ調節剤は塩酸とする。組成Ｃは、０．５重量％の酸化錫、０．８重量％の酸化ビスマス、および１５重量％のエタノールを含有する。【選択図】なし
SEMICONDUCTOR ELECTROTHERMAL FILM PRECURSOR SOLUTION, SEMICONDUCTOR ELECTROTHERMAL FILM STRUCTURE, AND METHOD FOR MANUFACTURING ELECTROTHERMAL STRUCTURE
To provide a semiconductor electrothermal film structure with the characteristics of rapid temperature change resistance, breakdown resistance, a change in a wide range of adaptable voltage, high electrothermal conversion efficiency, and high temperature resistance.SOLUTION: A semiconductor electrothermal film precursor solution includes a composition A, a composition B, and a composition C, the composition A is 2 weight% tin (IV) chloride pentahydrate, 3 weight% stannous chloride, and 0.3 weight% glycerin, and further includes a PH adjuster to adjust the pH of composition A to 4.7 to 6.2, the PH adjuster of the composition A is glacial acetic acid. The composition B contains 5 weight% of the conductance modifier antimony (III) chloride dihydrate and 0.6 weight% of aluminum chloride, and a PH modifier that adjusts the PH of the composition B to between 4.7 and 5.0. and the pH adjuster of the composition B is hydrochloric acid. The composition C contains 0.5 weight% tin oxide, 0.8 weight% bismuth oxide, and 15 weight% ethanol.SELECTED DRAWING: None
【課題】電熱構造は耐温度急変、耐破壊、適応電圧の広い範囲の変化、電熱変換効率が高く、耐高温性が良い性質を有する半導体電熱膜構造を提供する。【解決手段】半導体電熱膜の前駆体溶液は、組成Ａ、組成Ｂおよび組成Ｃを含み、組成Ａは、２重量％の塩化スズ（ＩＶ）５水和物、３重量％の塩化第一スズ、および０．３重量％のグリセリンを含有し、さらに組成ＡのＰＨを４．７～６．２に調節するＰＨ調節剤を含み、組成ＡのＰＨ調節剤は氷酢酸とする。組成Ｂは、５重量％のコンダクタンス調節剤である塩化アンチモン（ＩＩＩ）２水和物、および０．６重量％の塩化アルミニウムを含有し、さらに組成ＢのＰＨを４．７～５．０に調節するＰＨ調節剤を含み、組成ＢのＰＨ調節剤は塩酸とする。組成Ｃは、０．５重量％の酸化錫、０．８重量％の酸化ビスマス、および１５重量％のエタノールを含有する。【選択図】なし
SEMICONDUCTOR ELECTROTHERMAL FILM PRECURSOR SOLUTION, SEMICONDUCTOR ELECTROTHERMAL FILM STRUCTURE, AND METHOD FOR MANUFACTURING ELECTROTHERMAL STRUCTURE
半導体電熱膜の前駆体溶液、半導体電熱膜構造、及び電熱構造の製造方法
LUO HAO (Autor:in) / CAI JIANCAI (Autor:in) / YANG XIAOHUA (Autor:in)
17.11.2022
Patent
Elektronische Ressource
Japanisch
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