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ALUMINA SINTERED BODY AND MANUFACTURING METHOD THEREOF
To provide an alumina sintered body having small dielectric loss tangent (tanδ) and a manufacturing method thereof.SOLUTION: An alumina sintered body of the present invention is an alumina-based sintered body containing 99.50 mass% or over and 99.95 mass% or under of Al2O3 as well as Na and Si. With respect to a surface layer part A in a given cross section and a central part B in the cross section in a depth direction from the surface layer part A, a concentration ratio of Na and Si in the surface layer part A, (Na/Si ratio), is smaller than a concentration ratio of Na and Si in the central part B, (Na/Si ratio).SELECTED DRAWING: None
【課題】誘電正接(tanδ)が小さなアルミナ焼結体及びその製造方法を提供する。【解決手段】本発明にかかるアルミナ焼結体は、Al2O3を99.50質量%以上、99.95質量%以下含むと共に、NaとSiを含むアルミナ質焼結体であって、前記任意の断面における表層部Aと、前記表層部Aから深さ方向における前記断面の中心部Bにおいて、前記表層部AでのNaとSiの濃度比(Na/Si比)が、前記中心部BでのNaとSiの濃度比(Na/Si比)よりも小さい。【選択図】なし
ALUMINA SINTERED BODY AND MANUFACTURING METHOD THEREOF
To provide an alumina sintered body having small dielectric loss tangent (tanδ) and a manufacturing method thereof.SOLUTION: An alumina sintered body of the present invention is an alumina-based sintered body containing 99.50 mass% or over and 99.95 mass% or under of Al2O3 as well as Na and Si. With respect to a surface layer part A in a given cross section and a central part B in the cross section in a depth direction from the surface layer part A, a concentration ratio of Na and Si in the surface layer part A, (Na/Si ratio), is smaller than a concentration ratio of Na and Si in the central part B, (Na/Si ratio).SELECTED DRAWING: None
【課題】誘電正接(tanδ)が小さなアルミナ焼結体及びその製造方法を提供する。【解決手段】本発明にかかるアルミナ焼結体は、Al2O3を99.50質量%以上、99.95質量%以下含むと共に、NaとSiを含むアルミナ質焼結体であって、前記任意の断面における表層部Aと、前記表層部Aから深さ方向における前記断面の中心部Bにおいて、前記表層部AでのNaとSiの濃度比(Na/Si比)が、前記中心部BでのNaとSiの濃度比(Na/Si比)よりも小さい。【選択図】なし
ALUMINA SINTERED BODY AND MANUFACTURING METHOD THEREOF
アルミナ焼結体及びその製造方法
NAKAGAWA TAKUYA (Autor:in) / FUKAZAWA YUJI (Autor:in)
10.07.2023
Patent
Elektronische Ressource
Japanisch
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