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    SINTERED BODY AND METHOD OF MANUFACTURING SINTERED BODY

    Neue Suche nach: MIN KYUNGYEOL
    Neue Suche nach: CHOI YONGSOO
    Neue Suche nach: HWANG SUNGSIC
    Neue Suche nach: NAM NA HYUN
    Neue Suche nach: KIM KYUNGIN
    Neue Suche nach: KANG JUNGKUN
    Neue Suche nach: LEE WOO JIN

    To provide a quartz glass-based sintered body exhibiting excellent plasma resistance properties, and a method of manufacturing the same.SOLUTION: The sintered body includes silicon oxide and carbon, where the sintered body has a D band peak at a wave number of 1311 cm-1 to 1371 cm-1 and a G band peak at a wave number of 1572 cm-1 to 1632 cm-1 in a Raman spectrum, and where the D band peak or the G band peak has higher intensity than a fifth peak present at a wave number of 1027 cm-1 to 1087 cm-1 in the Raman spectrum.SELECTED DRAWING: Figure 1

    【課題】優れた耐プラズマ特性を示す石英ガラスベースの焼結体及びその製造方法を提供する。【解決手段】焼結体は、酸化ケイ素及び炭素を含み、ラマンスペクトルにおいて、１３１１ｃｍ－１～１３７１ｃｍ－１の波数でＤバンドピーク、及び１５７２ｃｍ－１～１６３２ｃｍ－１の波数でＧバンドピークを有し、前記Ｄバンドピークまたは前記Ｇバンドピークは、前記ラマンスペクトルの１０２７ｃｍ－１～１０８７ｃｍ－１の波数で存在する第５ピークよりも大きい強度を有する。【選択図】図１

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    SINTERED BODY AND METHOD OF MANUFACTURING SINTERED BODY

    Neue Suche nach: MIN KYUNGYEOL
    Neue Suche nach: CHOI YONGSOO
    Neue Suche nach: HWANG SUNGSIC
    Neue Suche nach: NAM NA HYUN
    Neue Suche nach: KIM KYUNGIN
    Neue Suche nach: KANG JUNGKUN
    Neue Suche nach: LEE WOO JIN

    To provide a quartz glass-based sintered body exhibiting excellent plasma resistance properties, and a method of manufacturing the same.SOLUTION: The sintered body includes silicon oxide and carbon, where the sintered body has a D band peak at a wave number of 1311 cm-1 to 1371 cm-1 and a G band peak at a wave number of 1572 cm-1 to 1632 cm-1 in a Raman spectrum, and where the D band peak or the G band peak has higher intensity than a fifth peak present at a wave number of 1027 cm-1 to 1087 cm-1 in the Raman spectrum.SELECTED DRAWING: Figure 1

    【課題】優れた耐プラズマ特性を示す石英ガラスベースの焼結体及びその製造方法を提供する。【解決手段】焼結体は、酸化ケイ素及び炭素を含み、ラマンスペクトルにおいて、１３１１ｃｍ－１～１３７１ｃｍ－１の波数でＤバンドピーク、及び１５７２ｃｍ－１～１６３２ｃｍ－１の波数でＧバンドピークを有し、前記Ｄバンドピークまたは前記Ｇバンドピークは、前記ラマンスペクトルの１０２７ｃｍ－１～１０８７ｃｍ－１の波数で存在する第５ピークよりも大きい強度を有する。【選択図】図１

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    SINTERED BODY AND METHOD OF MANUFACTURING SINTERED BODY

    Neue Suche nach: MIN KYUNGYEOL
    Neue Suche nach: CHOI YONGSOO
    Neue Suche nach: HWANG SUNGSIC
    Neue Suche nach: NAM NA HYUN
    Neue Suche nach: KIM KYUNGIN
    Neue Suche nach: KANG JUNGKUN
    Neue Suche nach: LEE WOO JIN

    To provide a quartz glass-based sintered body exhibiting excellent plasma resistance properties, and a method of manufacturing the same.SOLUTION: The sintered body includes silicon oxide and carbon, where the sintered body has a D band peak at a wave number of 1311 cm-1 to 1371 cm-1 and a G band peak at a wave number of 1572 cm-1 to 1632 cm-1 in a Raman spectrum, and where the D band peak or the G band peak has higher intensity than a fifth peak present at a wave number of 1027 cm-1 to 1087 cm-1 in the Raman spectrum.SELECTED DRAWING: Figure 1

    【課題】優れた耐プラズマ特性を示す石英ガラスベースの焼結体及びその製造方法を提供する。【解決手段】焼結体は、酸化ケイ素及び炭素を含み、ラマンスペクトルにおいて、１３１１ｃｍ－１～１３７１ｃｍ－１の波数でＤバンドピーク、及び１５７２ｃｍ－１～１６３２ｃｍ－１の波数でＧバンドピークを有し、前記Ｄバンドピークまたは前記Ｇバンドピークは、前記ラマンスペクトルの１０２７ｃｍ－１～１０８７ｃｍ－１の波数で存在する第５ピークよりも大きい強度を有する。【選択図】図１

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    Titel:

    SINTERED BODY AND METHOD OF MANUFACTURING SINTERED BODY

    Weitere Titelangaben:

    焼結体及び焼結体の製造方法

    Beteiligte:

    MIN KYUNGYEOL (Autor:in) / CHOI YONGSOO (Autor:in) / HWANG SUNGSIC (Autor:in) / NAM NA HYUN (Autor:in) / KIM KYUNGIN (Autor:in) / KANG JUNGKUN (Autor:in) / LEE WOO JIN (Autor:in)

    Erscheinungsdatum:

    14.05.2024

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Japanisch

    Klassifikation:

    IPC:  H01L Halbleiterbauelemente , SEMICONDUCTOR DEVICES / C04B Kalk , LIME

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