Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
スパッタリングターゲット
This sputtering target is characterized by having a metal copper phase and an oxidized copper phase, wherein the volume fraction of the oxidized copper phase falls within a range of larger than 80 vol% but not larger than 90 vol%, the variation in specific resistance value at a target sputter surface is 50% or less with respect to the average specific resistance value, and the diameter of particles in the metal copper phase in the target structure falls within the range of 10-200 um. It is also preferable for the sputtering target to have the properties of a p-type semiconductor.
スパッタリングターゲット
This sputtering target is characterized by having a metal copper phase and an oxidized copper phase, wherein the volume fraction of the oxidized copper phase falls within a range of larger than 80 vol% but not larger than 90 vol%, the variation in specific resistance value at a target sputter surface is 50% or less with respect to the average specific resistance value, and the diameter of particles in the metal copper phase in the target structure falls within the range of 10-200 um. It is also preferable for the sputtering target to have the properties of a p-type semiconductor.