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    SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM

    인듐(In), 갈륨(Ga) 및 아연(Zn)의 산화물을 함유하는 스퍼터링 타겟으로서, ZnGaO로 표시되는 화합물 및 InGaZn로 표시되는 화합물을 포함하는 스퍼터링 타겟.

    A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa 2 O 4 and a compound shown by InGaZnO 4 .

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    SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM

    인듐(In), 갈륨(Ga) 및 아연(Zn)의 산화물을 함유하는 스퍼터링 타겟으로서, ZnGaO로 표시되는 화합물 및 InGaZn로 표시되는 화합물을 포함하는 스퍼터링 타겟.

    A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa 2 O 4 and a compound shown by InGaZnO 4 .

    Zugriff

    Download

    SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM

    인듐(In), 갈륨(Ga) 및 아연(Zn)의 산화물을 함유하는 스퍼터링 타겟으로서, ZnGaO로 표시되는 화합물 및 InGaZn로 표시되는 화합물을 포함하는 스퍼터링 타겟.

    A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa 2 O 4 and a compound shown by InGaZnO 4 .

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    Titel:

    SPUTTERING TARGET AND OXIDE SEMICONDUCTOR FILM

    Weitere Titelangaben:

    스퍼터링 타겟 및 산화물 반도체막

    Erscheinungsdatum:

    26.01.2017

    Medientyp:

    Patent

    Format:

    Elektronische Ressource

    Sprache:

    Koreanisch

    Klassifikation:

    IPC:  C04B Kalk , LIME / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL

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